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SiC crystal koritaanka alaabta ceeriin
| Iyo meesha Asal ahaan: | Shiinaha |
| Magaca Brand: | Semixlab |
| Number Model: | CVD SiC |
| Certification: | ISO 9001 |
| Order Tirada Yar ee: | Dhawr kgs (taageerada heerka R&D gadashada dufcadaha yar) |
| Price: | Habbee xigashooyinka qeexitaannada waxay taageeraan dalabaadka nadiifnimada sare (≥99.9999%) |
| Details Baako: | Nadiifin sare oo gaas aan shaqaynayn oo la shaabadeeyey, bacda bireed aluminium-ka-hortagga qoyaanka iyo ka-hortagga oksaydhka |
| Waqtiga dirida: | 7-15 maalmood (caadiga ah) / 20-30 maalmood (qaabka caadiga ah) |
| Shuruudaha Payment: | T/T (50% ka hor, 50% dhalmada ka hor) |
| Supply Kartida: | Awood wax-soo-saarka bishii 500kg, waxay taageertaa nadiifin sare (≥99.9999%) amarada |
Description
Qalabka kobaca kristal ee SiC waa walxihii ugu dambeeyay ee horumarsan ee ay samaysay Semixlab. Qaybta ugu muhiimsan waa CVD SiC block. Tayada SiC hal crystal oo ay kortay alaabtan cayriin ayaa ah mid aad u fiican waxayna leedahay heerka hogaaminta warshadaha.
Aasaaska badeecada dhalaalaya
Habka diyaarinta qaran dumis
Isticmaalka tignoolajiyada CVD ee dareeraha ah ee madaxa bannaan (patent No.: ZL2024XXXXXX), methyl trichlorosilane (MTS) horudhac ahaan, si loo gaaro:
daahirnimo> 99.9995% (GDMS wadarta falanqaynta aasaasiga ah)
Waxa ku jira Nitrojiin ≤0.09ppm (sifayn dheeraad ah ma leh)
Cabbirka walxaha 4-10mm (Qaabka is-faafinta dhaqameed <2.5mm)
Faa'iidada koritaanka Crystal
| Index | Habka is-fidinta caadiga ah ee budada SiC | Semixlab SiC walxo ceeriin koritaanka crystal |
| Cufnaanta microtubules ayaa kala duwan | 103~ 104cm-2 | <300 cm-2 |
| Heerka isticmaalka alaabta ceeriin | 30% -40% | > 50% |
Ilaalinta deegaanka iyo dhaqaalaha
Dheecaan wasakhaysan eber: hydrochloric acid waxa lagu dhex milmi karaa milix
Qiimaha dhimista 30%: alaabta ceeriin methyltrichlorosilane waa kiimikooyinka ugu badan ee Shiinaha
Kariimaha SiC oo lagu koray iyadoo la isticmaalayo wax cayriin koritaanka crystal SiC
Faahfaahin Gaar ah:
1. Magacyo kale: CVD SiC block; jajabka SiC.
2. Codsiga: Walxaha ceeriin ee SiC kobaca crystal hal.
3. Xuduudaha asaasiga ah: daahirnimada> 99.9995% (GDMS wadarta falanqaynta asaasiga ah), Nitrogen content ≤0.09ppm (aan lahayn nadiifin dheeraad ah), Cabbirka qaybta 4-10mm (habka is-faafinta dhaqameed <2.5mm).
sooc
Codsiyada
Walxaha ceeriin ee SiC hal crystal korriin.
Advantage tartanka
1. Horumar xagga daahirsanaanta ah
Daahirnimada ≥99.9995% (GDMS oo dhan falanqaynta element). Waxa ku jira Nitrojiin ≤0.09ppm waxa lagu gaadhay uumiga kiimikaad (sifayn labaad ma jiro). Gaar ahaan waxay ku habboon tahay badh-dahaadhka SiC baahiyaha koritaanka crystal-ka.
2. Cabbirka walxaha iyo hagaajinta cufnaanta
Cabbirka walxaha waaweyn (4-10mm), waxay si weyn u wanaajisaa awoodda culeyska culeyska (in ka badan 1.5kg ee mugga isku midka ah), yareynta cilladaha kaarboonka inta lagu jiro koritaanka crystal.
3. Faa'iidada kharashka ayaa muhiim ah
Iska yaree kharashka alaabta ceeriin 30%.
Isticmaalka methyltrichlorosilane (MTS) horudhac ahaan, kharashka wax iibsiga alaabta ceeriin waa kaliya 1/3 ee nidaamka qiiqa silica-nadiifinta sare leh ee caadiga ah. Heerka isticmaalka alaabta ceeriin> 50% (nidaamka dhaqameed kaliya 30% -40%).
4. Ilaalinta deegaanka ee habka loop xiran yahay
Wax wasakhaysan eber.
Hydrochloric acid, oo ka soo baxda wax soo saarka, waxay abuurtaa milix aan waxyeello lahayn iyada oo loo marayo falcelinta dhexdhexaadinta, iyada oo gebi ahaanba ka fogaanaysa saddexda dhibaatooyinka daaweynta qashinka ee hababka dhaqanka (qarashyada daaweynta gaaska qashin-qaadista/qashinka ayaa ka badan 15%).
5. boodboodka tayada Crystal
Cufnaanta microtubules waxay ahayd <300 cm-2.
Saamiga Si / C ee alaabta ceeriin waxay ku dhowdahay 1: 1 (hab dhaqameedka weecsanaanta> 5%), hoos u dhigista cilladaha kala soocida silikoon inta lagu jiro koritaanka crystal. Wax-soo-saarka wax-soo-saarka ee 85%-92% (65%-75% ee badeecadaha tartamaya), hoos u dhigista hal goynta kristal ee macaamiisha hoose.
