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Susceptor Epi graphite wafer kali ah
| Iyo meesha Asal ahaan: | Shiinaha |
| Magaca Brand: | Semixlab |
| Number Model: | SWEGS0001 |
| Certification: | ISO9001 |
| Order Tirada Yar ee: | 1pc |
| Price: | kartoo |
| Details Baako: | Sanduuqa dhoofinta caadiga ah |
| Waqtiga dirida: | 30-45days |
| Shuruudaha Payment: | In lagu gorgortamo |
| Supply Kartida: | 300pcs bishiiba |
Description
ASM monolithic saxaarad epitaxial waxaa loogu talagalay waxqabadka sare ee silicon carbide (SiC), gallium nitride (GaN) iyo habka kale ee jiilka saddexaad ee semiconductor epitaxial, alaabta waxaa ka mid ah set of saxaarad graphite, giraanta graphite iyo accessories kale, iyadoo la isticmaalayo substrate graphite daahirnimo sare + uumiga dhigaalka silikoon carbide daahan qaab-dhismeedka heerkulka sare ee kiimikada, iyadoo la tixgelinayo heerka sare ee heerkulka beerta. Waa xudunta udub-dhexaadka u ah xaashida epitaxial-ka ee saxda ah ee wax soo saarka tirada badan.
Faahfaahin Gaar ah:
1. Magacyo kale: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, hal wafer susceptor.
2. Codsiga: Silicon carbide (SiC) wax qabad sare leh, gallium nitride (GaN) iyo habka kale ee jiilka saddexaad ee semiconductor epitaxial.
sooc
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 · kg-1·K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Da'yarka Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1·K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Hawlaha Muhiimka ah iyo Naqshadaynta Qodobbada
Hal-abuurnimada walxaha: graphite + daahan SiC
Graphite
-Ultra-sare heerkulka sare (> 130 W / m · K), jawaab deg deg ah ee shuruudaha xakamaynta heerkulka, si loo hubiyo xasiloonida habka.
Isku-dhafka fidinta kulaylka hooseeya (CTE: 4.6 × 10⁻⁶ / ° C), hoos u dhig qallafsanaanta heerkulka sare, kordhiso nolosha adeegga.
| Tilmaamaha jireed ee garaafyada isostatic | ||
| Property | Unit | Qiimaha caadiga ah |
| Cufnaanta Bulk | g/cm³ | 1.83 |
| darantahay ingeega, | HSD | 58 |
| Iskudarida Korantada | μΩ.m | 10 |
| Awoodda Firfircoon | MPA | 47 |
| Xoojinta isdhexgalka | MPA | 103 |
| Xoog siligga | MPA | 31 |
| Dhallinta Modul | GPA | 11.8 |
| Balaadhinta kulaylka (CTE) | 10-6K-1 | 4.6 |
| Habdhaqanka kulaylka | W·m-1·K-1 | 130 |
| Celceliska Cabbirka Hadhuudhka | umm | 8-10 |
dahaarka CVD SiC
-iska caabinta daxalka. Iska caabi weerarka gaaska falcelinta sida H₂, HCl, iyo SiH₄. Waxay ka fogaanaysaa faddaraynta lakabka epitaxial iyadoo isbeddelaysa walxaha saldhigga ah.
Cufnaanta dusha sare: porosity dahaarka ayaa ka yar 0.1%, kaas oo ka hortagaya xiriirka u dhexeeya graphite iyo wafer kana hortagaya faafinta wasakhowga kaarboonka.
Dulqaadka heerkulka sare: shaqada muddada-dheer ee xasilloon ee deegaanka ka sarreysa 1600 ° C, la qabsiga baahida heerkulka sare ee Epitaxy SiC.
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 J·kg-1·K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Da'yarka Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1·K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Goobta kulaylka iyo naqshadaynta hawo-mareenka
Qaab dhismeedka shucaaca kulaylka ee lebbisan
Dusha susceptor waxaa loo qaabeeyey iyada oo leh grooves badan oo kuleyl ah, iyo nidaamka ASM ee qalabka kulaylka ee nidaamka xakamaynta heerkulku gaaro ± 1.5 ° C (6-inch wafer, 8-inji wafer), hubinta joogtaynta iyo lebis ee dhumucda lakabka epitaxial (isbedel <3%).
Farsamada hagidda hawada
Godadka leexinta cirifka iyo tiirarka taageerada ee janjeera waxaa loogu talagalay in lagu wanaajiyo qaybinta qulqulka laminarka ee gaaska falcelinta ee dusha sare ee wafer, la yareeyo kala duwanaanshaha heerka dhigista ee ay sababto qulqulka qulqulka, iyo hagaajinta isku midka ah doping.
Waafaqid iyo isku halaynta
La qabsiga muuqaallo badan
La jaan qaadaya 4H-SiC, 6H-SiC homoepitaxy, iyo GaN-on-SiC heteroepitaxy hababka, taageer N/P nooca doping (sida N₂, Al doping).
Dayactirka nolosha dheer
Adag ee daahan Silicon carbide gaadho 430 Gpa 4pt qalooci, 1300 ℃, iska caabin ah nabaad guurka qayb waxaa kordhay in ka badan 3 jeer, nolosha adeegga ee saxaarad kaliya ka badan 5000 saacadood geedi socodka, iyo kharashka isticmaalka dhamaystiran waa la dhimay.
Codsiyada Goobta
Qalabka korontada ee SiC-cabbirka baabuurka
5G RF module hore-dhamaadka
Nidaamyada kaydinta tamarta iyo tamarta
Tilmaamaha Farsamada Guudmarka
| Shayga | faahfaahinta |
| Qalabka aasaasiga ah | Garaafka saafiga ah ee istatic (nadiifinta> 99.9995%) |
| Tignoolajiyada dahaarka | Kaydinta uumiga kiimikada (CVD) ee carbide silicon |
| Cabbirka wafer | 4/6/8 inch (la beddeli karo) |
| Heerkulka ugu badan ee shaqada | 1650°C |
| Labbiska heerkulka | ≤±1.5°C (Wafer 6-inch ah, nidaam xaalad deggan) |
| Dhumucda dahaarka | 50-500 μm (La hagaajin karo, ± 10 μm sax ah) |
Advantage tartanka
Joogteynta habka: Iyada oo loo marayo naqshadaynta asalka ah ee qalabka ASM, wakhtiga hagaajinta ee goobta kulaylka iyo socodka hawada waa la dhimay.
Ballanqaadka wasakheynta eber: Dahaarka SiC wuxuu dhaafaa SEMI heerka ogaanshaha wasakhda birta (Fe, Ni, iwm <1ppb).
Dayactirka jawaab-celinta degdega ah: Qaab dhismeedka saxaarad modular, taageerada beddelka khadka iyo taageerada farsamada.