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Doonta Wafer Ceramic Silicon Carbide
| Iyo meesha Asal ahaan: | Shiinaha |
| Magaca Brand: | Semixlab |
| Number Model: | TC-SIC-WB-2501 |
| Certification: | ISO 9001 |
| Order Tirada Yar ee: | 1 Cutub |
| Price: | Xidhiidhka Xigasho Gaar ah |
| Details Baako: | Xumbo ka-hortagga-static |
| Waqtiga dirida: | Waqtiga Bixinta: 30-45 Maalmood Kadib Xaqiijinta Dalabka |
| Shuruudaha Payment: | T / T |
| Supply Kartida: | 100 Cutub/Bishii |
Description
Silicon Carbide Ceramic Wafer Boat waa wax qabad heersare ah oo xambaarsan qalab loogu talagalay wax soo saarka semiconductor iyo habka tamarta sawir-qaadista. Waxay ka samaysan tahay walxo dhoobo ah oo silikoon carbide (SiC) nadiif ah, taas oo lagu sameeyay habka sintayn la'aanta ee horumarsan. Waxay leedahay iska caabin heerkul sare oo heer sare ah, xasilloonida kiimikaad iyo xoogga farsamada, waxayna noqotaa udub dhexaad u ah gudbinta waferka, heerkulka sare ee nuugista iyo hababka kale ee saxda ah.
1. Xasilooni ka jirta deegaan aad u daran
Qaab-dhismeedka molecular ee ceramics-ka sic-ga waxa uu siinayaa degganaansho kulayl-sare leh, kaas oo ilaalin kara qaab-dhismeedkiisa jawi heerkul sare oo joogto ah oo ah 1650°C. Marka la barbar dhigo quartz-ka caadiga ah ama aluminiumka, isku-darka balaadhinta kulaylka ee doonyaha sic waa mid aad u hooseeya (kaliya 4.5×10-6/°C), si wax ku ool ah looga fogaado qallafsanaanta ama dildilaaca ay sababaan isbeddellada heerkulka degdega ah. Wax-soo-saarka semiconductor, hantidani waxay si weyn u yareeyn kartaa barakicinta waferka ee habka heerkulka sare iyo hagaajinta wax-soo-saarka.
2. Iska caabin daxalka ah oo aan la mid ahayn
Ceramics Silicon carbide waxay muujinaysaa iska caabin xooggan oo aysiidhyo xooggan (sida hydrofluoric acid, sulfuric acid), saldhigyo xooggan iyo gaasas oksidizing (Cl₂, O₂). Xataa baaruudda ama jawiga halogen oo ah 1400°C, korka ayaa ahaanaya mid siman oo aan daxalka lahayn, iyada oo hubinaysa in aanay wasakhdu ku hadhayn dusha sare ee waferka.
3. Cimri dheer oo adeeg iyo faa'iidooyin dhaqaale
Iyada oo loo marayo habka daaweynta cufnaanta dusha sare ee gaarka ah, caabbinta xirashada ee doonta silikoon carbide waxay ka badan tahay 15 jeer ka badan kan alaabta dhaqameed. Tijaabada dhabta ah waxay muujineysaa in ka dib wareegyada 1000 ee 1400 ° C jawiga oksaydheynta, qallafsanaanta dusha sare ayaa weli ka hooseeya 0.2μm ee Ra, iyo waqtiyada wareejintu waxay gaari karaan 5-8 jeer kuwa doomaha dhoobada caadiga ah, taas oo si weyn u yareyneysa inta jeer ee xiritaanka qalabka iyo beddelka, iyo badbaadinta kharashka dhamaystiran waa in ka badan 30%.
Faahfaahin Gaar ah:
1. Magacyo kale: Silicon carbide crystal boat, semiconductor ceramic carrier.
2. Codsiga: Waxaa loo isticmaalaa faafinta heerkulka sare, oxidation iyo annealing habka wax soo saarka semiconductor si ay u qaadaan maraqa Silicon iyo in la hubiyo qaybinta kulaylka isku mid ah.
3. Xuduudaha asaasiga ah: nadiifnimada ≥99.99%, iska caabbinta heerkulka ugu badan ee 1500 ℃, hoos udhaca fidinta kulaylka (4.5 × 10-6 / ℃), caabbinta shoogga kulaylka xooggan.
sooc
| Astaamaha jireed ee Sintered Silicon Carbide | |
| Property | Qiimaha caadiga ah |
| Qaab dhismeedka Chemical | SiC>98% |
| Cufnaanta Bulk | >3.07 g/cm³ |
| Borosity muuqda | |
| Hababka dillaaca ee 20 ℃ | 270 MPa |
| Hababka dillaaca ee 1200 ℃ | 290 MPa |
| Adag markay tahay 20 ℃ | 2400 Kg/mm² |
| adkaanta jabka 20% | 3.3 MPa · m1/2 |
| Heerarka kulaylka ee 1200 ℃ | 45 w/m·K |
| Balaadhinta kulaylka at 20-1200 ℃ | 4.5 × 10-6/℃ |
| Heerkulka shaqada ugu badan | 1400 ℃ |
| U adkaysiga shoogga kulaylka at 1200 ℃ | Good |
| Astaamaha jireed ee Silicon Carbide dib loo soo celiyay | |
| Property | Qiimaha caadiga ah |
| Heerkulka shaqada (°C) | 1600°C (oo oksijiin leh), 1700°C (hoos u dhaca deegaanka) |
| nuxurka SiC | > 99.96% |
| Ka kooban Si bilaash ah | <0.1% |
| Cufnaanta Bulk | 2.60-2.70 g/cm3 |
| Borosity muuqda | <16% |
| Xoog cadaadis | > 600 MPa |
| Xoog laabashada qabow | 80-90 MPa (20°C) |
| Xoog foorarsi kulul | 90-100 MPa (1400°C) |
| Balaadhinta kulaylka @1500°C | 4.7x10-6/° C |
| Dhaqdhaqaaqa kulaylka @1200°C | 23 W/m·K |
| Qalabaynta Elastic | 240 GPA |
| Cadaadiska shoogga | Aad u wanaagsan |
Codsiyada
Daawaynta kulaylka sare ee waferrada semiconductor (oxidation, annealing, doping).
Wershadaha sawir-qaadista ee dahaarka wafer iyo sintering.
Advantage tartanka
Degganaanshaha heerkulka aadka u sarreeya: iska caabbinta muddada-dheer ee heerkulka sare ee 1500 ° C, ma laha qallafsanaan ama hoos u dhac ku yimaada waxqabadka.
Naqshad hoose oo wasakhaysan: walxo nadiif ah oo sarreeya + habka aan dhejiska lahayn, iska ilaali wasakhowga birta.
Cimri dheer: caabbinta shoogga kulaylka oo aad u fiican, nolol adeeg oo ka dheer sidaha quartz 3-5 jeer.
Habaynta dabacsan: cabbirka taageerada, kala dheeraynta booska, habeynta qoto dheer ee daaweynta dusha sare.
