TaC dahaarka leh qaybo ka mid ah badhkiis ee LPE

Dulmarka alaabada

Tantalum carbide (TaC) qaybaha dahaarka leh ee nusmoonka waa qayb muhiim ah oo loogu talagalay qalabka silikoon carbide (SiC) qalabka epitaxial, sida qalabka LPE, si loo ilaaliyo qolalka falcelinta iyo hagaajinta xasiloonida habka heerkulka sare, jawiga daxalka. Marka la barbar dhigo daboolka dhaqameed ee silikoon carbide (SiC), dahaarka tantalum carbide waxay noqdeen xalka udub dhexaadka u ah jiilka cusub ee qalabka epitaxial semiconductor sababtoo ah iska caabin heerkul sare oo heer sare ah, qallafsanaan kiimikaad iyo xasilloonida kuleylka.

Xaaladda codsiga iyo qiimaha

Tantalum carbide dahaarka leh qaybaha dayaxa kala badh ayaa inta badan loo adeegsadaa xaaladaha soo socda ee muhiimka ah:

Qalabka koritaanka Epitaxial SiC: ee LPE (wejiga dareeraha epitaxial), CVD (ku-dhigista uumiga kiimikada) iyo hababka kale, sida qayb ka mid ah ilaalinta qolka falcelinta, si loo hubiyo isku-duubnaanta heerkulka sare iyo habka joogtada ah.

Wax soo saarka jiilka seddexaad ee semiconductor: ku habboon soo saarista faraqa ballaaran ee semiconductor epitaxial layers sida silicon carbide (SiC) iyo gallium nitride (GaN), si loo daboolo baahiyaha xaashida epitaxial tayo sare leh ee baabuurta korantada, isgaarsiinta 5G, iyo aaladaha hawada sare.

Isbarbardhigga daahan dhaqameed ee silikoon carbide

Xaqiijinta tignoolajiyada iyo habka hal-abuurka

Dahaarka tantalum carbide waxaa lagu diyaariyaa kaydinta uumiga kiimikada ee ugu horreeya (CVD) ama habka kaydinta uumiga jirka (PVD), hubinta daahan cufan oo aan cillad lahayn iyo dhumuc labis ah oo la xakameyn karo (sida caadiga ah 50μm). Baahida gaarka ah ee qalabka semiconductor, tignoolajiyada doping gradient sidoo kale waxaa loo isticmaali karaa si loo hagaajiyo adhesion u dhexeeya daahan iyo substrate, iyo sii wanaajiyo caabbinta daalka kulaylka.

Faa'iidooyinka asaasiga ah ee daahan tantalum carbide

Degganaanshiyo heerkul sare ah:

Tantalum carbide (TaC) waxay leedahay meel dhalaalaysa ilaa 3880°C (aad uga saraysa Silicon carbide's 2700°C) waxayna ilaalisaa sharafta qaabdhismeedka heerkul ka sareeya 1800°C. Dabeecaddani waxay ka dhigaysa mid aad ugu fiican hababka heerkulka aadka u sarreeya ee koritaanka epitaxial SiC (sida MOCVD, LPE), ka fogaanshaha dahaarka fashilka sababtoo ah diiqada kulaylka ama marxaladda kala-guurka.

Jilicsanaan la'aan kiimikaad oo heer sare ah:

Habka SiC epitaxy, inta badan waxaa jira gaasyo firfircoon oo ay ku jiraan silikoon (Si), hydrogen (H₂) iyo halogen (Cl) qolka falcelinta. Iska caabbinta daxalka tantalum carbide ee gaasaska noocan oo kale ah ayaa si aad ah uga fiican kan silikoon carbide, kaas oo si wax ku ool ah u yareeyn kara falcelinta dhinaca u dhaxaysa daahan iyo gaaska falcelinta, taas oo yaraynaysa khatarta wasakhowga walxaha iyo hagaajinta tayada lakabka epitaxial.

Isbarbardhigga fidinta kulaylka hoose:

Isku-dhafka fidinta kulaylka ee tantalum carbide (~ 6.3 × 10⁻⁶ / K) waxay ku dhowdahay tan substrate graphite (~ 4.2 × 10⁻⁶ / K), taas oo yareyn karta cadaadiska interface ee ay keento baaskiil kuleyl ah, ka fogow dildilaaca ama diirka daboolka, oo kordhiya nolosha adeegga qaybta.

Iska yaree kharashka dayactirka oo kordhi wax soo saarka:

Dahaarka dhaqameed ee SIC way fududahay in ay oksaydheeyaan ama kaga falceliyaan gaasaska hab-socodka heerkulka sare, una baahan waqti-dhimis joogto ah si loo dayactiro. Adkeysiga daboolka tantalum carbide wuxuu si weyn u kordhin karaa wareegga dayactirka, wuxuu yareynayaa wakhtiga hoos u dhaca qalabka, wuxuuna yareeyaa kharashka guud in ka badan 30%.