CVD SiC dahaarka wafer suceptor

Semixlab waxay diiradda saartaa horumarinta iyo soo saarista dahaarka silikoon carbide (SiC) nadiif ah oo sarreeya, waxayna ka go'an tahay inay bixiso xalal waxqabad sare leh warshadaha semiconductor. Iyada oo loo marayo tignoolajiyada kaydinta uumiga kiimikaad ee horumarsan (CVD), waxaanu siinaa adeegyo dahaar gaar ah oo loogu talagalay kuwa shakiga leh ee wafer si loo hubiyo waxqabadkooda sare ee jawiga nidaamka aadka u daran.

Waxaan samaynaa daahan β-SiC-nadiifinta sare (jihaynta crystal (111)) dusha sare ee substrate graphite daahirsanaanta sare iyada oo loo marayo technology CVD, isla mar ahaantaana, waxa uu leeyahay iska caabin heerkulka ultra-sare, caabbinta daxalka iyo awoodda qaybinta kulaylka uniform. Alaabooyinka ku habboon Aixtron, Veeco iyo qalabka kale ee kobaca epitaxial caadiga ah, oo si weyn loogu isticmaalo GaN/GaAs iyo kobaca epitaxial kale.

Substrate-ka waferka dahaarka ee CVD SiC wuxuu ka samaysan yahay garaaf SGL daahirnimo sare leh, iyo daahan silikoon carbide cufan ayaa si isku mid ah ugu koray dusha sare ee habka kaydinta uumiga kiimikada (CVD). Nidaamkan waxaa lagu sameeyaa qol falcelin heerkul sare ah oo hubiya daacadnimada nanoscale crystalline ee daahan iyadoo si sax ah loo xakameynayo saamiga isha silikon (tusaale, methyltrichlorosilane) ilaa gaaska isha kaarboon, heerkulbeeg (sida caadiga ah inta u dhaxaysa 1000 ° C iyo 1400 ℃) iyo heerka dhigista. Dhumucda dahaarka waxaa loo habeyn karaa iyadoo loo eegayo shuruudaha codsiga, laga bilaabo dhowr microns ilaa tobanaan microns, si loo daboolo shuruudaha xoogga farsamada ee heerkulka aadka u daran, iyada oo la iska ilaalinayo khatarta dilaaca cadaadiska sababtoo ah dhumuc badan.

Koritaanka epitaxial LED, saxaarada waferka waxay u baahan tahay inay u adkaysato heerkul sare oo degdeg ah oo ka sarreeya 1600 ℃ iyo baaskiil kulaylka degdega ah. Iyada oo leh barta dhalaalka sare ee dabiiciga ah (qiyaastii 2700 ℃), iskudar hoose ee ballaarinta kulaylka (4.5 × 10)^-6/ K) iyo kulaylka kuleylka heer sare ah (~ 120 W / m · K), daboolka CVD SiC wuxuu ilaalin karaa xasilloonida joomatari ee hoos yimaada isbedbedelka heerkulka ba'an wuxuuna ka fogaanayaa wafer-waring ama dildilaaca yar yar ee ay keento diiqada kulaylka. Intaa waxaa dheer, la'aanta kiimikada ee SiC waxay ka dhigaysaa inay muujiso iska caabbinta daxalka xooggan ee gaaska daxalka (sida HCl, H).₂bay'ada, si weyn u yaraynaysaa wasakhda wasakhda ah ee ay keento isbedbedelka ama falcelinta dhinaca inta lagu guda jiro geeddi-socodka, taas oo kor u qaadeysa isku-duubnaanta lakabka epitaxial ee dusha sare ee wafer iyo dhalidda qalabka.

Alaabta ayaa si weyn loogu isticmaalaa jiilka saddexaad ee wax soo saarka semiconductor, wax soo saarka chip LED awood sare. Tusaale ahaan, habka kaydinta uumiga kiimikada ee birta-organic (MOCVD) ee aaladaha GaN-on-SiC RF, saxaarad CVD SiC waxay ku gaadhaa isku mid ahaanshaha heerkulka gudaha ± 1℃ ee dusha waferka iyada oo loo marayo qaabaynta qaybinta kuleylka saxda ah, hubinta in leexashada lakabka epitaxial uu ka yar yahay 1%. Isla mar ahaantaana, sifooyinkeeda sii daynta qayb yar (cufnaanta qayb <0.1/cm²sida lagu qiyaaso SEM-EDS) waxay ka dhigtaa mid aad u fiican jawiga qolka aadka u nadiifka ah, gaar ahaan ku haboon qanjidhada nidaamka horumarsan ee xasaasiga u ah cilladaha (sida hababka la caawiyay ee chips-ga ka hooseeya 5 nm).

Marka la barbar dhigo saxarada wafer-dhaqameedka, nolosha adeegga CVD SiC dahaarka wafer hy pnotic tor waxaa lagu kordhin karaa 3-5 jeer. Sifooyinkeeda nadiifinta dusha sare waxay yareeyaan soo noqnoqoshada dayactirka iyo, oo ay weheliso tignoolajiyada dib-u-dejinta daahan daahan maxaliga ah, waxay yaraynaysaa soo noqoshada wareegga maalgashiga in ka badan 40%. Marka loo eego xogta cabbiraadda warshadaha, xariiqda wax soo saarka 6-inji ee SiC epitaxial iyadoo la isticmaalayo badeecadan waxay yareyn kartaa isbedbeddelka habka u dhexeeya dufcadaha 15%, waxay kordhisaa awoodda wax soo saarka sanadlaha ah 20%, waxayna yareyn kartaa heerka qashinka sababtoo ah wasakheynta wax ka yar 0.03%.

Laga soo bilaabo cilmi baarista shaybaarka iyo horumarinta ilaa wax soo saarka ballaaran, Semixlab's CVD SiC dahaarka wafer hy pnotic tor ayaa had iyo jeer lala beegsaday hogaamiyaha warshadaha. Ma aha oo kaliya geedi socod la isticmaali karo, laakiin sidoo kale waa tiirarka tignoolajiyada ee goobta wax soo saarka saxnaanta heerkulka sare. Waxay sii wadi doontaa inay bixiso dammaanad lagu kalsoonaan karo oo loogu talagalay soo saarista aaladaha dhamaadka-sare ee beeraha gees-goynta sida isgaarsiinta 5G, korantada tamarta cusub, iyo xisaabinta tirada.

Taageerada Wafer iyo wareejinta kulaylka ee hababka MOCVD, oo ay ku jiraan buluug iyo cagaaran LED, UV LED iyo qoto dheer-UV LED iwm, kaas oo lagu habeeyey qalabka LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI iyo wixii la mid ah.

Farsamada hogaaminta: Habka CVD si loo gaaro (111) hanuuninta β-SiC, cabbirka hadhuudhka 2-10μm, qaabdhismeedka cufan.

La qabsiga deegaanka aadka u daran: caabbinta oksaydhka heerkulka sare, caabbinta nabaad-guurka balaasmaha, dambas <5ppm.

Maareynta kulaylka heersare ah: Kuleylka kuleyliyaha 300W/m·K, CTE waxay si fiican u dhigma garaafka si looga fogaado dillaaca kulaylka.

Adeegga nidaamka buuxa: Taageer habaynta substrate-ka, dhigista dahaarka, tijaabinta bixinta hal-joojin.