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CVD SiC daahan qaybaha garaafyada Half-moon
Faahfaahin Gaar ah:
1. Magacyo kale: Qaybaha dayaxa nuska garaafyada ee dahaarka leh, qaybaha hagaha socodka foornada epitaxial, SiC epitaxial graphite susceptor.
2. Codsiga: Hagaajin socodka gaaska, xakamaynta goobta kulaylka iyo isku midnimada falcelinta foornada SiC epitaxial, susceptor koritaanka lakabka SiC.
3. Xuduudaha asaasiga ah: nadiifnimada ≥99.99995%, caabbinta heerkulka 1600 ° C, kuleylka kuleylka 300W / m · K.
Description
Semixlab waxay suuqa siisaa qayb aad u wanaagsan oo CVD SiC daahan qaybaha garaafyada Half-moon oo ah qaybta taageerada udub dhexaadka u ah qolka falcelinta. Iyada oo loo marayo naqshadaynta laba-laabka ah ee qalabka iyo qaab-dhismeedka, waxay bixisaa jawi geeddi-socod leh heerkul sare, firfircooni kiimiko oo sarreeya iyo khatarta wasakhowga hoose ee koritaanka SiC epitaxial. Waxay noqotay fure la isticmaalo si looga gudbo dhalooyinka wax soo saarka ballaaran ee xaashida epitaxial-ka ee cabbirka weyn iyo cillad yar.
Xudunta u ah wax soo saarka chip semiconductor, xasiloonida habka kobaca epitaxial ayaa si toos ah u go'aamisa waxqabadka iyo wax-soo-saarka qalabka. CVD SiC daahan Qaybaha garaafiga ah ee Half-moon, sida isticmaalka xudunta u ah qaadista wafers ee qalabka epitaxial, iyada oo loo marayo horumarka of qalab ka kooban iyo technology processing sax ah, xalliyo dhibaatada khasaaraha degdega ah iyo wasakhaysan shirarka graphite caadiga ah heerkulka sare (1200-1800 ℃) iyo aadka u daxalaysan sida gaasaska aadka4/C3H8/H2. Qaybtu waxay ka samaysan tahay saafiga sare ee istatic-ka ah ee lagu riixo SGL graphite substrate oo leh 50μm cufan cufan silikoon carbide ah oo ku yaal dusha sare ee habka kaydinta uumiga kiimikada (CVD), kaas oo isku daraya kuleylka kuleylka sare ee graphite iyo iska caabbinta heerkulka aadka u daran ee silicon carbide. Joomatari dayaxa nuska ah ee gaarka ah (180 ° ± 5 ° arc, dhexroorka dibadda ee qalabka 4/6/8) wuxuu wanaajiyaa lebbiska dhumucda lakabka epitaxial ilaa ± 1.5% iyada oo la wanaajinayo dariiqa socodka iyo qaybinta goobta kulaylka, iyada oo xannibaysa faafinta wasakhda birta (Fe iyo Al content <0.1ppm) hoos u dhigista garaafyada. Cufnaanta cilladda lakabka epitaxial waa la dhimay in ka yar 0.05cm-2.
Cabirada:
6 inch, 8 inch, 12 inch.
sooc
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 · kg-1·K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Da'yarka Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Codsiyada
SiC epitaxial lakabka korriinka garaafka susceptor.
Wecinta gaaska gelitaanka iyo xakamaynta goobta kulaylka ee foornada koritaanka epitaxial ee SiC.
Waqtigan xaadirka ah, tignoolajiyada ayaa lagu dabaqay khadka wax soo saarka ee silikoon wafer epitaxy ee hormuudka ka ah soosaarayaasha semiconductor ee Shiinaha, kor u qaadista celceliska waxsoosaarka aaladaha SiC MOSFET min 90% ilaa 98%, iyo yareynta qiimaha epitaxy ee foornada hal 40%. Mustaqbalka, iyada oo la dardargelinayo habka wax-soo-saarka 8-inch ee SiC wafer, hal-abuurka isku-dhafan ee daahan isku-dhafka ah (SiC / Si₃ N ₄) iyo moduleka maaraynta kulaylka caqliga leh waxay kor u qaadi doontaa qaybta si ay u ciyaarto qiimo warshadeed oo dheeri ah oo ku saabsan codsiyada korantada aadka u sarreeya sida hawada hawada iyo baabuur koronto oo cusub.
Advantage tartanka
Waxqabadka faa'iidada leh:
Codsiga la taaban karo ee koritaanka epitaxial SiC, qaybtu waxay muujinaysaa faa'iidooyin wax qabad oo aad uga badan marka loo eego agabka dhaqameed: silikoon carbide daahan awoodda wareegga shoogga kuleylka ee in ka badan 1000 jeer (heerkulka qolka 1800 ℃ isbeddel degdeg ah), nolosha adeegga joogtada ah ee ka badan saacadaha 2000 (marka la barbar dhigo graphite aan la daboolin 5 jeer). Intaa waxaa dheer, iskudarka ballaarinta kulaylka (4.5×10-6/ K) ayaa si aad ah ugu habboon substrate-ka garaafyada (4.8 × 10-6/K), kaas oo si wax ku ool ah uga fogaanaya dillaaca dahaarka iyo daadinta walxaha ay keento diiqada heerkulka sare, waxayna hubisaa khatarta wasakhda eber ee foornada koritaanka epitaxial.
Naqshadeynta qaab dhismeedka saxda ah: qaab dhismeedka hagaha nuska-bilaha wuxuu wanaajiyaa qaybinta gaaska, wuxuu yareeyaa qalalaasaha iyo kulaylka deegaanka.
La qabsiga deegaanka aadka u daran: daahan β-SiC waxay u adkaysataa oksaydhka heerkulka sare iyo nabaad guurka balaasmaha, nolosheeda waxaa lagu kordhiyey in ka badan 3 jeer.
Labbiska goobta kulaylka: kulaylka kuleyl 300W/m·K, CTE iyo graphite substrate is dhigma, iska ilaali dillaaca diiqada kulaylka.
Adeegga nidaamka buuxa: taageer habaynta substrate-ka, dhigista dahaarka, tijaabinta waxqabadka hal-joojin gaarsiinta.
