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Dahaarka SiC Graphite Foosto Suceptor
Faahfaahin Gaar ah:
1. Magacyo kale: foosto garaafeed foornada Epitaxial, saxaarad wafer ah oo dahaarka leh, nooca foosto susceptor wafer, susceptor graphite
2. Codsiga: Habka koritaanka epitaxial wafer
3. Halbeegyada xudunta u ah: homogeneity ee garoonka socodka gaaska iyo kulaylka ee qolka falcelinta waxaa lagu wanaajin karaa iyadoo la isticmaalayo cadaadiska isostatic graphite matrix daahirsanaanta sare leh oo ay weheliyaan dhigaalka uumiga kiimikada (CVD) Tiknoolajiyada daahan SiC la caabin heerkulka of 1600 ℃, conductivity kaamerada of 300W / m · K iyo daahirsanaanta ah 99.9995% lakabka. waxay noqon kartaa
si weyn loo dhimay.
Description
Daahan SiC Graphite Wafer Epitaxy Barrel Suceptor waa udub dhexaadka loo isticmaalo qalabka kobaca Epitaxial SiC, naqshadeeduna waxay isku daraysaa kuleylka sare ee garaafka iyo iska caabbinta daxalka aadka u daran ee dahaarka SiC. Substrate-ku waa nadiifnimo sare oo Sigley graphite ah (nadiifinta ≥99.9995%) oo lagu sameeyay habka cadaadin ee isostatic. Daahan cufan ee 50μm β-SiC ayaa lagu kaydiyay dusha sare ee habka CVD. Waxay si wax ku ool ah u xannibtaa sii-deynta wasakhda ah ee graphite matrix heerkul sarreeya (1200-1800 ℃) iyo gaasaska gardarrada ah (sida SiH)4, C3H8iyo H2), ka fogaanshaha wasakhaynta waferka. Naqshad foostada (oo loogu talagalay 4/6/8 qalabka inch) Iyadoo la wanaajinayo dariiqa socodka hawada iyo qaybinta goobta kulaylka, lebbiska dhumucda lakabka epitaxial waxaa lagu xakameynayaa gudaha ± 1.5%, cufnaanta cilladda ayaa hoos loo dhigayaa <0.05cm-2. Intaa waxaa dheer, iskudarka ballaarinta kulaylka ee daahan SiC iyo matrix graphite ayaa si heer sare ah u dhigma (4.5×10).-6/K vs 4.8×10-6/K), ka fogaanshaha dillaaca dahaarka ama daadinta walxaha ay keento diiqada heerkulka sare, iyo hubinta hawlgalka xasilloon ee muddada dheer ee qalabka. Qaybta ayaa lagu dabaqay khadka wax soo saarka wafer epitaxy ee hormuudka ka ah soosaarayaasha semiconductor ee Shiinaha, qiimaha epitaxy ee hal foornada ayaa la dhimay 40%, waxsoosaarka aaladda ayaa la kordhiyay ilaa 98%.
Susceptor nooca foosto marka loo eego susceptor canjeelada
| Character | Susceptor Nooca Foosto | Susceptor canjeelada |
| Labbiska heerkulka | Labbiska inyar ka hooseeya sababtoo ah socodka hawada toosan iyo summaynta shucaaca (magdhowga heerkulka adag ayaa loo baahan yahay). | Summeteriga goobta kulaylku aad ayuu u sarreeyaa, isku-dhafka heerkulka diyaaradda ayaa ka wanaagsan. |
| Waxtarka socodka gaaska | Wareegga hawadu wuxuu ku wareegsan yahay gidaarka foosto, iyo maraqa cidhifyada si sahal ah ayaa loo xardhay/dhigayaa. | Socodku waa siman yahay dusha sare ee wafer, socodka iyo jihada si fudud ayaa loo xakameynayaa. |
| Awoodda iyo kharashka | Wax-soo-saarka sarreeya, oo ku habboon wax-soo-saarka ballaaran (tirada sare ee wafers halkii halbeeg). | Soo saarid hoose, oo ku habboon R&D/wax soo saarka dufcaddii yarayd. |
| Kakanaanta dayactirka | Qaab-dhismeedku waa mid adag, nadiifinta iyo bedelida waxay qaadataa waqti dheer. | Naqshad furan, dayactir fudud. |
sooc
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 J·kg-1·K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Da'yarka Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1·K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Codsiyada
Loo isticmaalo habka silikoon epitaxy/CVD
Inta badan loo isticmaalo aaladaha LPE-dhaqameedka ama CVD (sida nidaamyada hore ee Aixtron).
Advantage tartanka
Iska caabbinta deegaanka daxalka daran: β-SiC daahan ayaa u adkaysata nabaad guurka balaasmaha iyo oksaydhka, nolosheedana 5 jeer ayay ka dheertahay tan garaafka aan la daboolin.
Xakamaynta goobta kulaylka saxda ah: qaab dhismeedka foosto wuxuu yareeyaa qaska, kulaylka kuleylku wuxuu la mid yahay substrate-ka, wuxuuna ka fogaanayaa fashilka kulaylka.
Halista wasakheynta eber: Substrate-ka nadiifka ah ee aadka u sarreeya iyo daahan, wasakhda birta ah (Fe, Al) ka kooban <0.1ppm.
Adeegga geeddi-socodka oo dhan: kaalmaynta farsamaynta matrixka, dhigidda dahaarka, tijaabada waxqabadka hal-joojin gaarsiinta.
