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Giraangiraha Diiradda Sare ee CVD SiC
Giraangiraha diiradda saaraya ee CVD ee Semixlab waxaa loo sameeyay jawi horumarsan oo lagu qurxiyo balaasmaha, iyagoo keenaya xasillooni balaasmaha ah oo heer sare ah, wasakheyn aad u hooseysa, iyo cimri dheer oo adeeg ah. Waxaa lagu sameeyay iyadoo la adeegsanayo carbide silicon oo ah silikoon ah oo lagu kaydiyo uumiga kiimikada ee cufnaanta sare leh (CVD), giraangirahan diiradda saaraya waxay bixiyaan iska caabin heer sare ah oo ka dhan ah nabaad-guurka balaasmaha iyo weerarka kiimikada, taasoo ka dhigaysa kuwo ku habboon hababka muhiimka ah ee lagu sameeyo semiconductor-ka. Waxaan rajeyneynaa inaad hesho su'aal dheeraad ah.
Description
Injineernimada Mustaqbalka Etch-ka Sub-7nm 99.99999% Nadiifnimo Aad u Sareysa | Qalinjabin Xasilloon oo HAR ah | Beddel ka Wanaagsan Giraanta Silikoon
Da'da 300+ lakabka transistors-ka 3D NAND iyo GAA, waxyaabaha la isticmaalo ee dhaqameed ayaa ah sababta ugu weyn ee dhibaatooyinka wax soo saarka. Faraantiyada diiradda saaraya ee Semixlab ee CVD ee adag ee SiC waxaa loogu talagalay inay xakameeyaan balaasmaha cufnaanta sare leh ee loo baahan yahay si loo sameeyo sawir-qaadista saamiga sare (HAR). Waxay abuuraan jawi deggan oo aan lahayn walxaha oo giraangiraha silicon (Si) ee caadiga ah aysan bixin karin.
Heerka Warshadaha: Sababta Hoggaaminta Fabs-ka ugu Gudubto SiC Adag
7-Sagaal (99.99999%) Nadiifinta Birta: Adigoo adeegsanaya habkayaga gaarka ah ee Kaydinta Uumiga Kiimikada ee Sare, waxaan gaarnaa wasakhda birta oo dhan < 0.1 ppm. Tani waxay door muhiim ah ka ciyaartaa ka fogaanshaha cilladaha la xiriira dallacaadda iyo wasakhowga birta culus ee ku jira jajabyada macquulka ah iyo xusuusta ee horumarsan.
Xakamaynta Wareegga Sax ah ee Edge (ERO): Giraanteena adag ee SiC waxay ilaaliyaan iska caabin koronto oo deggan iyo kuleyl badan (≥ 150 W/m·K). Tani waxay abuurtaa qolof balaasma oo isku mid ah oo ku taal geeska wafer-ka.
Tani waxay si toos ah u xallisaa arrimaha Edge Roll-off ee dhibaatada ku haya midnimada 12-inch wafer.
Iska caabbinta Nabaad-guurka ee HAR Etching: Balaasma-da Fluorine-ku salaysan (CF4/CHF3) iyo Chlorine-ku salaysan (Cl2) ee tamarta sare leh, Solid SiC waxay muujinaysaa heer nabaad-guur 80% ka hooseeya Silicon-ka hal-kristaalka ah. Tani waxay dheereysaa muddada PM (Dayactirka Kahortagga), taasoo si weyn hoos ugu dhigaysa Qiimaha Guud ee Lahaanshaha (CoO).
Daacadnimada "adag" ee Hal-ku-dhegga ah: Si ka duwan Graphite-ka dahaarka leh ee SiC, qaybahayagu waa 100% cufnaan SiC. Tani waxay meesha ka saartaa khatarta ah in la kala furfuro ama la kala furfuro dahaarka, taasoo ka hortagaysa wasakhowga walxaha ee masiibada ah inta lagu jiro wareegyada etch-ka ee awoodda sare leh.
Loogu habeeyay Madal Etch-ka Jiilka Xiga
Xaruntayada wax soo saarka waxay isticmaashaa 5-axis oo ah CNC iyo Laser Metrology oo xawaare sare leh si loo hubiyo in 100% la jaanqaadi karo qeexitaannada OEM ee:
● Etch-ka Konductor-ka: Poly-Si iyo Silicide Etching.
● Dielectric Etch: Taabashada Saamiga Aragtida Sare (HAR) iyo qodista godka.
● Iswaafajinta: Beddelka soo-gelida ee Lam Research (Kiyo/Versys), Qalabka La Adeegsaday (Centris), iyo aaladaha TEL (Tactras/Vigus).
sooc
| Halbeegga Technical | Semixlab CVD Solid SiC | Halbeegga Warshadaha (Si) | Geesta Tartanka |
| Nadiifinta kiimikada | 99.99999% (7N) | 99.999% (5N) | Waxay baabi'isaa daadinta ion-ka |
| Halabuurka Wajiga | 100% β-SiC (Cubic) | Keli ah Crystal Si | Iska caabbinta embriyaha ee isotropic |
| Cufnaanta Dadweynaha | ≥99.8% (3.20 g/cm3) | N / A | Qaab-dhismeedka eber-daloolista |
| Adkaanta Vickers | 28 - 30 GPA | ~9 GPA | Waxay iska caabisaa duqaynta ion |
| Neefsashada Dhulka | Ra <0.2 μm | Ra ~0.5μm | Adhesion polymer yar |
Codsiyada
Goobaha Codsiga ee Furaha
Meesha looga baahan yahay daahirnimo xad dhaaf ah iyo adkeysi balaasmaha ah, CVD-gayaga Solid SiC wuxuu u taagan yahay heerka warshadaha:
● Cabbirka 3D NAND & DRAM: Waxaa loogu talagalay caqabadaha HAR (Saamaynta Aragtida Sare). Waxay bixisaa xasilloonida loo baahan yahay si loo daabaco iyada oo loo marayo 300+ lakab iyada oo aan la beddelin muuqaalka.
● Qaloocyada Macquulka ee Sub-7nm: Gaar ahaan qaab-dhismeedka FinFET iyo GAA. Waxaan ka caawinnaa warshadaha inay baabi'iyaan wasakhda birta raadadka ah, annagoo ilaalinayna shabagga jilicsan ee transistor-yada jiilka xiga.
● Xarunta Korontada ee Semiconductor-ka: Hadday tahay SiC epitaxy ama qodista godka qoto dheer ee GaN, qaybahayagu waxay maareeyaan culayska kulaylka sare ee wax soo saarka ballaca ballaaran.
● TSV & Baakad Sare: Waxaa loo habeeyay hababka loo maro Silicon Via, iyadoo la hubinayo simanka dhinaca iyo saxnaanta toosan ee lagama maarmaanka u ah is-dhexgalka 2.5D/3D.
Adeegyada aan bixino
