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Garaafyada Isostatic-sare ee nadiifka ah ee semiconductor
Garaafyada Isostatic-sare ee nadiifka ah ee semiconductor

Garaafyada isostatic-sare ee nadiifka ah ee semiconductors


Nadiifinta sare ee garaafka isostatic-ga waa shay horumarsan oo muhiim u ah wax soo saarka semiconductor, Iyada oo lebiskeeda kulaylka, saxnaanta cabbirka, iyo wax qabad la'aanta faddarayn, graphite isostatic ayaa weli lagama maarmaan u ah horumarinta hababka semiconductor sida MOCVD, RTP, faafinta, iyo SiC epitaxy. Cufnaanteeda lebiska ah iyo mashiinnada aadka u wanaagsan waxay oggolaadaan abuurista saxda ah ee kakan, qaybaha waxqabadka sarreeya. Adigoo rajaynaya wada tashigaaga dheeraad ah.

Description


sooc
Tilmaamaha jireed ee garaafyada isostatic
Property Unit Qiimaha caadiga ah
Cufnaanta Bulk g/cm³ 1.83
darantahay ingeega, HSD 58
Iskudarida Korantada μΩ.m 10
Awoodda Firfircoon MPA 47
Xoojinta isdhexgalka MPA 103
Xoog siligga MPA 31
Dhallinta Modul GPA 11.8
Balaadhinta kulaylka (CTE) 10-6K-1 4.6
Habdhaqanka kulaylka W·m-1K-1 130
Celceliska Cabbirka Hadhuudhka umm 8-10
Xadgudubka % 10
Waxyaabaha Dambaska ah ppm ≤5 (ka dib markii la nadiifiyo)
Codsiyada

Semixlab Nadiifinta Sare ee Garaafiga Isostatic, oo ay ugu wacan tahay nadiifinteeda sare, qaab dhismeedka hadhuudhka wanaagsan, cufnaanta isku midka ah, iska caabinta shoogga kuleylka, iyo mashiinnada heer sare ah, ayaa si ballaaran loogu isticmaalaa warshadaha semiconductor. Hoos waxaa ah alaabooyinka waaweyn ee la dhammeeyey iyo doorarkooda u dhigma ee hababka muhiimka ah:

Istatic Graphite ee Codsiyada Semiconductor

1. Gudaha MOCVD (Birta-Organic Kiimikada Uumiga ah)

MOCVD waa habraac xudun u ah samaynta lakabyada epitaxial ee GaN, GaAs, iyo SiC. Garaafyada Isostatic waxaa badanaa loo isticmaalaa soo saarista:

● Susceptors: U adeega sida wafer-qaadayaasha xajiya oo ku wareejay waferrada gudaha reactor-ka. Waxay bixiyaan kulayl isku mid ah wareejinta, hubinta koritaanka epitaxial joogto ah oo dhan dusha wafer. Caadi ahaan waxaa lagu dahaadhay CVD SiC ama TaC si loo hagaajiyo iska caabbinta kiimikada loona kordhiyo cimriga.

● Wafer Carriers/Doomaha Garaafka: Waxaa loo isticmaalaa in lagu raro maraqa badan oo isku mar ah. Waxay u baahan yihiin mashiin sax ah si ay u ilaashadaan fidsanaanta wafer kana fogaadaan faddaraynta.

● Walxaha kuleyliyaha: Kuleyliyeyaasha garaafyada waxay bixiyaan goobo kuleyl ah oo xasiloon oo isku mid ah oo lagama maarmaan u ah epitaxy-tayada sare leh.

Doorka muhiimka ah: Garaafyada Isostatic waxay hubisaa isku mid ahaanshaha heerkulka, xasiloonida kiimikada, iyo nolosha adeegga dheer, taas oo si toos ah u saameynaysa tayada filimka epitaxial.

2. Foornooyinka Annealing & Faafinta

Tallaabooyinka habaynta kulaylka-sare, sida faafinta dopant, oxidation, iyo annealing, waxay si weyn ugu tiirsan yihiin qaybaha garaafyada isostatic, oo ay ku jiraan:

● Doomaha Foornada Faafinta: Qabo marawaxadaha inta lagu guda jiro habaynta heerkulka sare iyo hababka faafinta. Graphite wuxuu bixiyaa degenaansho kulayleed heer sare ah iyo qallafsanaan yar oo hoos timaada baaskiil kuleyl oo soo noqnoqda.

● Xadhkaha iyo walxaha dahaarka: Xadhkaha garaafka iyo gaashaammada waxay ka ilaaliyaan qolalka foornada wasakhaynta waxayna xoojiyaan isku-duubnida heerkulka.

● Tuubooyinka kuleyliyaha & Walxaha: Waxaa loo isticmaalaa kuleyliyeyaasha iska caabbinta ee jawi kuleyl sare leh, taasoo keenta kuleyl sax ah oo joogto ah.

Doorka muhiimka ah: Qaybaha garaafyada Isostatic waxay awood u siinayaan daawaynta kulaylka ka xorta ah faddaraynta, xasiloon, iyo ku celcelinta, oo muhiim u ah firfircoonida dopant iyo yaraynta cilladaha.

3. SiC Epitaxy (4H-SiC, 6H-SiC kobaca)

Kobaca epitaxial ee SiC wuxuu u baahan yahay heerkul aad u sarreeya (> 1500 ° C) iyo bey'ado gaas wasakhaysan. Garaafyada istatic waxaa loo isticmaalaa in lagu sameeyo:

Susceptors-dahaarka SiC: Bixi taageerada substrate inta lagu jiro SiC epitaxy, hubinta qaybinta kulaylka wanaagsan iyo xasilloonida dusha sare ee xaaladaha daran.

● Garaafyada Garaafyada & Haysta Wafer: Hubi maraqyada inta lagu jiro wareegtada iyo socodka gaaska, hubinta heerka kobaca isku midka ah iyo dhumucda lakabka.

● Qaybaha Tube-ka ee habka: Qaybaha garaafyada qaab-dhismeed ee gudaha reactors epitaxy waxay u adkaystaan ​​bay'ada gardarada ah iyadoo la ilaalinayo nadiifnimada.

Doorka muhiimka ah: Garaafyada Isostatic ee SiC epitaxy waxay bixisaa saxnaanta cabbirka, caabbinta kiimikada, iyo maaraynta kulaylka la isku halayn karo, taas oo si toos ah u saameynaysa dhalidda wafer iyo lebbiska filimka epitaxial.

Iyada oo hormuud ka ah alaab-qeybiyaha sare ee garaafyada isostatic-ka sare ee Shiinaha, Semixlab waxaa ka go'an in ay bixiso badeecado horumarsan iyo xalal farsamo oo loogu talagalay warshadaha farsamaynta semiconductor. Waanu soo dhawaynaynaa su'aalahaaga wakhti kasta waxaanan si dhab ah u rajaynaynaa inaad noqoto lamaanahaaga mudada dheer.

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