Haysta Wafer ee SiC Dahaarka leh

SiC Coated Wafer Holder waa taageero wafer ah oo loogu talagalay habraacyada heerkulka sare ee semiconductor. Waxay isticmaashaa substrate graphite-nadiifinta sare leh + daahan CVD SiC, waxay leedahay iska caabin aad u fiican, caabbinta shoogga kuleylka iyo sifooyinka wasakhowga hooseeya, waxaana si weyn loogu isticmaalaa hababka muhiimka ah sida SiC / GaN epitaxy, MOCVD, CVD, iyo faafinta si loo hubiyo gudbinta xasilloon iyo wax soo saarka sare ee wafers ee jawi heerkul sare ah.

Codsiga:

SiC (Silicon Carbide) sidayaal wafer-dahaar leh ayaa loo adeegsadaa semiconductor, photovoltaic, LED iyo soo saarista elektiroonigga sare sababtoo ah sifooyinkooda gaarka ah.

Adeegyada la bixin karo: 

Falanqaynta xaaladda codsiga macaamiisha, agabka u dhigma, xallinta dhibaatada farsamada.

Halbeegyada Technical

Goobaha codsiga ee ugu muhiimsan

Taageerada xaqiijinta silsiladda deegaanka

Semixlab SiC Dahaarka Wafer wuxuu isticmaalaa budada silikoon kaarbiide oo nadiif ah oo nadiif ah waana ISO-shahaado, taasoo ka dhigaysa "lamaan la isku halayn karo" wax soo saarka semiconductor-ka sare oo leh horumarin waxqabad la qiyaasi karo (wax soo saar, nolol, nadaafad).

Habka codsiga caadiga ah

Pretreatment Substrate → Xulashada maadada → Mashiinka → Nadiifinta → Qalafsanaanta dusha sare (Chemical etching）→ Dhigista daahan SiC) (CVD) → Dib-u-habaynta ka dib → Nadiifinta heerkulka sare Tijaabada Wareega → Nadiifinta iyo Baakaynta

Iyada oo loo marayo hagaajinta cabbirka habka, Haystaha Semixlab SiC Coated Wafer wuxuu ku guuleystey horumar horumarsan oo ku saabsan hababka wax soo saarka semiconductor (sida CVD, kobaca epitaxial, etching, iwm.), si tartiib tartiib ah u beddelay soo dejinta suuqa semiconductor. Haddii aad u baahan tahay inaad hesho waraaqo cadcad oo tifaftiran oo faahfaahsan ama aad diyaarsato tijaabada muunad, fadlan la xidhiidh kooxdayada taageerada farsamada.

Semixlab SiC Dahaarka Wafer haysta faa'iidooyinka xudunta u ah

Iska caabin heerkul sare oo heer sare ah

Deganaanshaha heerkulka sare: SiC waxay leedahay dhibic dhalaalaysa ilaa 2700 ℃ waxayna si joogto ah u shaqayn kartaa wakhti dheer jawiga geedi socodka 1000 ℃ ~ 1600 ℃ (sida CVD, MOCVD, koritaanka epitaxial, iwm.), Taas oo aad uga fiican sidayaal bir ah ama aluminium aluminium ah. Isku xidhka balaadhinta kulaylka hooseeya, ma fududa in lagu beddelo heerkul sare, iyo in la ilaaliyo saxnaanta meelaynta waferka.

Iska caabbinta shoogga kulaylka: SiC waxay leedahay kororka kulaylka sare, waxay si dhakhso ah oo siman u baabi'in kartaa kulaylka, waxayna yaraynaysaa khatarta dillaaca ee ay keento isbeddelada heerkulka degdega ah (ka sii raagaya graphite).

Daxalka iyo iska caabinta wasakhda oo aad u fiican

U adkaysta gaasaska daxalka leh sida HCl, H2, NH3(kuwa caanka ku ah etching iyo geedi socodka epitaxial), ka hortagga sidaha in uu daxaleeyo oo uu keeno wasakhayn walxaha. Waxqabadka adag ee ka-hortagga oksaydheynta, oo ka xasilloon marka loo eego graphite ee heerkulka heerkulka sare leh ee deegaanka oksijiinta ku jira (graphite wuxuu u baahan yahay ilaalinta dahaarka, halka SiC lafteedu ay u adkaysato oksaydhka). Dahaarka SiC wuxuu gaari karaa nadiif ah in ka badan 99.999%, isagoo ka hortagaya wasakhda birta ah (sida Fe, Ni) inay wasakhayso maraqa, waxayna si gaar ah ugu habboon tahay silikoon-ku-saleysan iyo semiconductor bandgap ballaaran (GaN, SiC).

Xoog farsamo sare iyo xirashada iska caabin

Qalafsanaanta sare (Mohs adkeyd 9.2, labaad oo keliya dheeman), dusha sare ma fududa in la xoqo, yaraynta khatarta qayb ka mid ah daadinta iyo kordhinta nolosha adeegga. Ku habboon geeddi-socodka u baahan xiriir joogto ah sida CMP (dalaynta farsamada kiimikaad), caabbinta xirashada ayaa ka fiican daahaarka birta ama dhoobada. Ma fududa in la isku beddelo culeyska heerkulka sarreeya oo wuxuu ilaaliyaa flatness of wafer (marka la barbar dhigo graphite, taas oo ay fududahay in la dillaaco).

Dareenka kulaylka heer sare ah iyo isku mid ahaanshaha kulaylka

Qabashada kulaylka degdega ah waxay hubisaa kuleylinta isku midka ah ee maraqa (waxay yaraynaysaa dhumucda aan sinnayn inta lagu jiro koritaanka epitaxial). Ku habboon kor u kaca heerkulka degdega ah iyo hababka hoos u dhaca (sida RTP degdegga ah ee nuugista) si loo hagaajiyo waxtarka wax soo saarka. Isku-dhafka fidinta kulaylka ee SiC wuxuu ku dhow yahay kan silikoon (Si) iyo silikoon carbide (SiC) wafers, hoos u dhigista cilladaha daaqsinka ee uu keeno diiqada kulaylka.

Nolosha dheer iyo kharashka dayactirka oo hooseeya

Deegaannada balaasmaha (sida etching qalalan), SiC waxay leedahay iska caabin ka wanaagsan aluminium ama quartz, nolosheeda waxaa lagu kordhin karaa 3 ilaa 5 jeer. Dusha sare waa cufan oo siman, mana fududa in la nuugo hadhaaga habka. Waxa dib loo isticmaali karaa iyada oo la gubo heerkul sare ama nadiifin kiimiko.

Waafaqid iyo dabacsanaanta naqshadeynta

Dahaarka SiC waxaa lagu kaydin karaa substrates sida graphite, molybdenum, iyo fiber carbon, iyadoo la tixgelinayo iftiinka iyo xoogga sare labadaba. Iyada oo loo marayo CVD ama hababka buufinta, qaababka adag ee sideyaasha (sida qaab-dhismeedyada daloolka leh iyo walxaha kuleylka ku dhex jira) ayaa la diyaarin karaa.