MOCVD SiC Dahaarka Graphite Susceptor

1. Nolosha oo la kordhiyey 300%+

Tiknoolajiyada lakabka kaydinta ayaa u sahlaysa tirada wareegyada shoogga kulaylka inay ka badan yihiin 5,000 jeer (wax ka yar 1,500 jeer alaabta caadiga ah).

Heerkulka shaqada ee joogtada ah wuxuu gaari karaa 1650 ° C, dahaarkana ma muujinayo dildilaac ama dillaac.

2. Damaanad qaadka wasakhowga eber

Nadiifinta daahanka SiC waa darajada 6N (wadarta guud ee wasakhda birta <0.5ppm).

Gudubtay imtixaanka SEMI caadiga ah ee sii deynta walxaha (Fasalka 10 nadaafadda).

3. Kor u qaadida lebiska goobta kulaylka

Farqiga heerkulka ee dusha sare wuxuu ka yar yahay ± 2 ° C (xogta la qiyaasay ee qeexitaanka Φ300mm).

Waxay taageertaa kulaylka degdega ah (20°C/s) iyada oo aan lahayn qallafsanaanta kulaylka.

4. Iska caabin daxalka heer sare ah

U adkaysta daxalka gaasaska sida H2, NH3, iyo TMAl, oo leh nolol adeeg ka badan 18 bilood.

Heerka isbeddelka qallafsanaanta dusha sare waa in ka yar 5% (la tijaabiyay ka dib 100 wareegyada habka).

5. La jaanqaadi kara moodooyinka caadiga ah ee adduunka oo dhan

Waxay taageertaa beddelka dhexroorka u dhexeeya 50 ilaa 500mm.

6. Kordhinta kharashka wareegga nolosha oo buuxa

Wareegga dayactirka ayaa la kordhiyay ilaa saddex jeer oo ka mid ah alaabta caadiga ah.

Heerka wax-soo-saarka wafers epitaxial ayaa kordhay 2-3%.

Awooda Shirkadda

Semixlab Technology Co., Ltd waxay leedahay 2 R&D xarumaha, 2 saldhigyada wax soo saarka, 12 khadadka wax soo saarka, 150+ shaqaalaha, iyo R&D xisaabaadka in ka badan 30%. Qaabaynta alaabtayada waxaa inta badan loo isticmaalaa LED, wareegga isku dhafan ee IC, jiilka saddexaad ee semiconductor, photovoltaic iyo warshadaha kale. Semixlab waxay leedahay R&D xooggan, wax soo saar iyo tijaabin isku dhafan iyo awoodo xaqiijin. Isla mar ahaantaana, waxaan si joogto ah u hagaajineynaa tignoolajiyadayada iyo qalabkayaga maalgelinta tobanaan milyan sanadkii.

Halbeegyada waxqabadka muhiimka ah

Xuduudaha mashruuca

Maaddada salka waa SGL istatic graphite pressed

Dhumucda dahaarka: 80-200μm (la beddeli karo)

Nadiifinta dahaarka waa ≥99.9999%

Cufnaanta: 1.85-1.90 g/cm³

Dhaqdhaqaaqa kulaylka: 125 W/m·K (RT)

Xoog dabacsanaan ≥45 MPa

Heerkulka shaqaynaya ≤1800°C

Nidaamka hubinta tayada

Raadinta hab-socod-buuxa: Diiwaangelin buuxda oo xogta laga soo bilaabo substrate-ka garaafyada ilaa habka daahan

Ogaanshaha saxda ah: Falanqaynta daahan SEM/EDS, Helium mass spectrometry leak detection, heerkulka sare ee shoogga kulaylka.

Astaamaha asaasiga ah ee daahan CVD SiC:

Xaaladaha codsiga ama qalabka: Qalabka Aixtron Epi

Xaaladaha codsiga muhiimka ah

● Wax soo saarka chip-ka LED: Kobaca Epitaxial ee GaN buluug/cad.

● Semiconductors koronto: Qalabka korontada ee SiC/GaN (MOSFET, HEMT).

● 5G aaladaha soo noqnoqda raadiyaha: mikrowayt-ka soo noqnoqda sare ee soo noqnoqda chip substrate.

● Diode leysarka: VCSEL, habka epitaxial laser gees-baxa.

● Baakadaha horumarsan: Dhigista filimada khafiifka ah ee semiconductor-ka saxda ah.

Dulmar guud ee silsiladda warshadaha semiconductor chip epitaxy: