CVD TaC dahaarka Tilmaamaha Ring

Semixlab's CVD TaC daahan Tilmaamaha Ring waxaa loogu talagalay PVT SiC habka kobaca kristanta oo isticmaala tignoolajiyada kaydinta uumiga kiimikaad (CVD) si ay u samaysato daahan tantalum carbide (TaC) cufan oo cufan oo ku yaal dusha sare ee substrate garaafyada nadiifka ah. Badeecada waxaa loo isticmaalaa habka PVT si loo hubiyo tayada hal-abuurka leh ee SiC iyo waxtarka kobaca iyadoo si sax ah loo xakameynayo qaybinta kulaylka iyo jihada hawo-mareenka foornada kobaca ee SiC. Ku habboon noocyo kala duwan oo ah nidaamyada foornada korriinka ee SiC hal crystal iyo nidaam guri, oo ku habboon heerkulka sare (> 2000 ° C) iyo jawi daxalaysan oo xooggan.

Tantalum carbide (TaC), oo ah wakiilka caadiga ah ee ceramics heerkul aad u sarreeya, waxay leedahay barta dhalaalaysa ee 3880 ℃, adkaanta Mohs ee ku dhawaad ​​​​10, kuleyl heer sare ah oo heer sare ah (qiyaastii 22 W / m · K) iyo kororka fidinta kulaylka hooseeya (6.6 × 10-6 K-1), iyo istaraatijiyad heerkulbeeg ah oo ka sii fiican marka loo eego heerkulbeeg hoose Daahan TaC waxaa lagu koray ee kala duwanaanta heerkulka 1373 ~ 1673K by kayd uumi kiimikaad (CVD) isticmaalaya TaCl₅-C₃H₆-H₂-Nidaamka falcelinta Ar, taas oo u ogolaatay in si sax ah loo kantaroolo dhumucda daahan (50 ~ 300μm), cabbirka hadhuudhka, iyo kaarboonka bilaashka ah. Natiijooyinku waxay muujinayaan in marka heerkulka dhigaalka uu gaaro 1573K, daahan TaC waxay soo bandhigaysaa isdhexgal is haysta oo bilaa dillaac ah, iyo miraha waxay sameeyaan qaab-dhismeed joogto ah oo ka-hortagga qashinka iyada oo loo marayo isku-xidhka birta. Tirada wareegyada iska caabinta shoogga kulaylka ayaa ka badan 5 jeer marka loo eego garaafyada aan dahaarka lahayn. Naqshad lakabka kala-guurka ah ee tartiib-tartiib ah, sida qaab-dhismeedka isku-dhafka ah ee TaC/Ta₂O, ayaa lagu soo bandhigay geeddi-socod si loo sii fududeeyo walbahaarka is-dhexgalka ee u dhexeeya daahanka iyo substrate-ka oo loo hubiyo inay ilaaliso xasilloonida joomatari inkasta oo heerkulka daran uu isbeddelayo (> 1000 ° C / min).

Foornada korriinka PVT, giraanta Deflector ee CVD TaC ee dahaarka leh ayaa mas'uul ka ah hagidda marinka gudbinta wajiga gaaska, ilaalinta jaan-goynta heerkulka axial, iyo taageeridda crystal abuurka iyo qallafsanaanta alaabta ceeriin. Qaybaha garaafyada dhaqameedku way fududahay in ay la falgalaan Si / C uumiga si ay u sameeyaan karbides kacsan heerkulka sare, taasoo keentay in nabaad guurka dusha iyo sii daayo wasakh ah, taas oo si toos ah u saameeya daahirsanaanta ee crystal. Sababo la xiriira la'aanta kiimikada ee aadka u daran, daahan CVD TaC waxay soo bandhigaysaa firfircoonida eber ee Si, C uumiga iyo alaabada (sida HCl) ee 2300 ℃, si wax ku ool ah u xannibaya faafinta wasakhda substrate-ka (Fe, Al iyo walxo kale oo bir ah) si ay u dhexgalaan korriinka. Xogta la cabbiray waxay muujinaysaa in ka dib markii giraanta hagaha daahan TaC la isticmaalo, cufnaanta microtubule ee 6-inch SiC hal crystal la dhimay ilaa <0.5cm-2, iyo lebbiska iska caabin ah ayaa la kordhiyay ilaa ± 3% gudahood, taas oo si gaar ah ugu habboon wax soo saarka ballaaran ee SiC MOSFETs ee ka sarreeya 1200V ee modules drive koronto baabuurta tamarta cusub.

Si loola qabsado qalabka kobaca ee PVT SiC ee caadiga ah, CVD TaC dahaarka Tilmaamaha Ring wuxuu qaataa naqshad qaabaysan. Iyadoo la wanaajinayo heerka socodka hore ee socodka iyo dariiqa dhigaalka, leexinta dhumucda dahaarka lebbiska ayaa lagu xakameynayaa gudaha ± 3%, xitaa wejiga qaab dhismeedka kanaalka qulqulka adag (sida kanaalka gaaska wareega, lakabka dhexdhexaadka ah), dabool buuxa ayaa la gaari karaa. Marka la barbar dhigo buufin dhaqameedka ama daahan la jeexjeexay, habka CVD wuxuu siinayaa lakabka TaC microhardness ilaa 25GPa iyo xoog isku xidhid interface ah> 50MPa. Ka dib saacadaha 2000 ee hawlgalka heerkulka sare ee joogtada ah, heerka khasaaraha tayada daahan ayaa ka yar 0.1%, taas oo si weyn u kordhisa wareegga beddelka qaybta. Marka loo eego tirakoobyada, khadka wax soo saarka ee SiC ee isticmaalaya giraanta hagaha waxay kordhin kartaa wakhtiga koritaanka wax ku oolka ah ee foornada in ka badan 120 saacadood, waxay kordhisaa awoodda wax-soo-saarka sanadlaha ah ee ku saabsan 18%, waxayna yaraynaysaa wakhtiga hoos u dhaca ee aan la qorshayn sababtoo ah fashilka qaybaha 70%.

Xakamaynta jaranjarada heerkulka ee foornada koraysa ee kiristaalka ah ee SiC.

Silicon carbide crystal fidinta iyo hagida koritaanka jihada.

Waxqabadka heerkulka aadka u sarreeya: TaC daahan heerkulka iska caabbinta ilaa 2000 ° C, xasilloonida heerkulka sare ayaa ka fiican daahan SiC-da dhaqameed.

Iska caabin daxalka adag: Iska caabin heer sare ah u leh warbaahinta xooggan sida silikoon dhalaalaysa iyo uumiga kaarboonka.

Xakamaynta goobta kulaylka saxda ah: lebbiska dahaarka sare leh (xajmiga hadhuudhka 5-15μm) si loo hubiyo joogteynta kobaca kareemka.

Nakhshad gaar ah: Taageerida hab-dhismeedka kakan habaynta giraanta, oo ku habboon noocyada badan iyo nidaamka koritaanka foornada crystal-ka ah ee is-qaabeeya.