Ⅰ Waa maxay xaaladaha codsiga ee alaabta dhoobada silikoon carbide?

dhoobada Silicon carbide (SiC) ayaa si weyn loogu isticmaalaa qaybaha asaasiga ah ee qalabka habka muhiimka ah ee semiconductor iyo warshadaha sawir-qaadista sababtoo ah iska caabin heerkul sare oo heer sare ah, caabbinta daxalka, korantada kuleylka sare iyo iskudhafka fidinta kuleylka hooseeya. Kuwa soo socda ayaa ah xaaladaha codsiga gaarka ah ee alaabta caadiga ah:

Silicon carbide doon

function:

SiC Boat waxaa badanaa loo isticmaalaa in lagu qaado marawaxadaha (sida waferrada silikoon ama waferrada silikoon carbide) gudbinta iyo meelaynta hababka kulaylka sareeyo.

Muuqaalka codsiga:

Goobta farsamaynta Semiconductor: Foornooyinka fidinta iyo foornooyinka oksaydhka, doontu waxay u baahan tahay inay si joogto ah ugu shaqeyso muddo dheer deegaan heerkul sarreeya oo ka sarreeya 1000 ° C si looga fogaado qallafsanaanta ama wasakheynta mareegaha sababtoo ah cadaadiska kulaylka.

Warshadaha sawir-qaadista: Qalabka PECVD (plasma wanaajinta uumiga kiimikada), doonnida waxaa loo isticmaalaa in lagu taageero wafers silikoon si loo dhigo silikoon nitride filim ka-hortagga milicsiga, waxayna u baahan tahay inay u adkeysato bamka balaasmaha ee soo noqnoqda iyo jawi heerkul sare ah.

Tuubada foornada Silicon carbide (SiC Reaction Tube)

Shaqada: Sida qaybta xudunta u ah qolka falcelinta heerkulka sare, waxay bixisaa jawi heerkulbeeg ah iyo jawi kiimiko ahaan aan firfircoonayn.

Muuqaalka codsiga:

Warshadaha Semiconductor: Foornada oksaydhka, tuubada foornada waxay u baahan tahay inay xasilloonaato muddo dheer gudaha ogsajiinta ama deegaanka uumiga biyaha si looga fogaado sii daynta wasakhda ay sababto oksaydhka ama daxalka.

Warshadaha sawir-qaadista: Foornada faafinta, tuubada foornada waxaa loo isticmaalaa habka faafinta fosfooraska (sida diyaarinta unugyada PERC), waxaana lagama maarmaan ah in laga hortago daxalka gaaska acidic ee jawiga POCl₃.

Cantilever Paddle iyo Haysta Doonyaha

Hawsha: suufka cantilever waxaa loo isticmaalaa in si toos ah loogu wareejiyo doonnida crystal, iyo qaadaha waxaa loo isticmaalaa in lagu hagaajiyo booska doon crystal ah.

Muuqaalka codsiga:

Habka wafer-ka ee semiconductor, paddle cantilever wuxuu u baahan yahay inuu ilaaliyo xoogga farsamada sare inta lagu jiro kor u qaadista degdega ah iyo hoos u dhigista si looga fogaado jabka sababtoo ah daalka kulaylka; Haysta doonta waxay u baahan tahay inay ilaaliso saxnaanta joomatari heerkulka sare si looga hortago weecasho

Ⅱ Waa maxay tilmaamaha codsiga ee alaabta silikoon carbide ee warshadaha fotovoltaic iyo semiconductor?

Codsiyada asaasiga ah ee alaabada dhoobada silikoon carbide waxay ku urursan yihiin habka isku xirka laba nooc oo qalab ah:

Tilmaamayaasha Waxqabadka	Qalabka garaafka	Maaddada silikoon carbide
Dejinta heerkulka sare	Si fudud loo ogsixiyo (> 500 ° C waxay u baahan tahay ilaalinta daahan)	Anti-oxidation (waxay u adkeysan kartaa 1600°C jawi oksaydhiyaha ah muddo dheer)
Qalabka kiimikada	Si fudud in ay daxaliyaan gaasaska acidic ah (sida Cl₂, POCl₃)	Acid iyo alkali caabbinta daxalka (oo ay ku jiraan warbaahinta daxalka adag sida HF, HNO₃)
Khatarta wasakheynta walxaha	Way fududahay in la dhaliyo wasakhowga siigada, taasoo keentay cilladaha wafer	Oogada cufan, ma jirto wax khatar ah oo daadanaya
Awood farsamo	Way fududahay in lagu beddelo heerkul sare (isku-darka fidinta kulaylka sare)	Adayg sare (Mohs adkeyd 9.2), iska caabin shoog kulayl oo xoog leh
Qabsashada kuleylka	Anisotropy, khatarta sare ee kulaylka deegaanka	Heerkul sare oo heerkul sare ah (120 W/m`K), goobta heerkulka isku midka ah

Warshadaha sawir-qaadista

Foornada PECVD: waxaa loo isticmaalaa in lagu shubo aflaanta ka-hortagga milicsiga (sida silicon nitride). Qaybaha silikoon carbide waxay u baahan yihiin inay iska caabiyaan bamka ion ee ay keento qulqulka dhalaalka ee jawiga balaasmaha ee 400 ~ 500 ° C, iyadoo laga fogaanayo wasakheynta filimka.

Foornada faafinta: waxaa loo isticmaalaa faafinta fosfooraska/boron si loo sameeyo isgoysyada PN. Tubooyinka foornada Silicon carbide waxay u baahan yihiin inay u adkeystaan ​​daxalka POCl₃ ama gaasaska BBr₃ at 800 ~ 1000 ° C oo ay xaqiijiyaan isku mid ahaanshaha doping.

warshadaha Semiconductor

Foornada faafinta iyo foornada oksaydhka:

Foornada faafinta: waxaa loo isticmaalaa habka nusqaajinta ka dib marka la geliyo ion. Doomaha silikon carbide crystal waxay u baahan yihiin inay iska ilaaliyaan sii daynta wasakhda birta ah (sida Fe, Ni), haddii kale waxay keeni doontaa kororka qulqulka qulqulka biyaha.

Foornada Oxidation: Ku kora lakabyada Silicon dioxide ee ogsijiinta engegan ama deegaanka ogsijiinta qoyan. Tuubooyinka foornada ee Silicon carbide waxay u baahan yihiin inay ilaaliyaan ogsijiinta hooseeysa heerkulka sare ee 1200 ° C si looga hortago dhumucda lakabka oksaydhka ee aan sinnayn.

Ⅲ Waa maxay faa'iidooyinka alaabta silikoon carbide ka badan graphite?

In kasta oo walxaha graphite ay leeyihiin faa'iidooyinka qiimaha jaban iyo habaynta fudud, waxay aad uga hooseeyaan silikoon carbide ee sifooyinka muhiimka ah ee soo socda:

Falanqaynta kiis gaar ah:

Marka loo eego tirakoobka wax soo saarka dhabta ah ee Veteksemicon, foornada faafinta semiconductor, doonta graphite waxay u baahan tahay in la beddelo 3dii biloodba mar, halka doonta silikoon carbide ay socon karto in ka badan 2 sano, iyo wax-soo-saarka wafer-ka ayaa kordhay 5% ~ 10%.

Marka loo eego xogta wax soo saarka ee ay bixiso Semixlab, Habka sawir-qaadista ee PECVD, suufka silikoon carbide cantilever paddle wuxuu kordhin karaa waxtarka batteriga 2% ~ 5% sababtoo ah maqnaanshaha wasakhowga walxaha.

Ⅳ maxaad u dooratay Semixlab?

Semixlab waa hormoodka soo saaraha iyo alaab-qeybiyaha Shiinaha oo diiradda saarayay cilmi-baarista garaafyada iyo dahaarka dusha sare ee SiC muddo 20 sano ah. Sannado badan oo cilmi-baaris farsamo iyo horumarin ah ka dib, habkayaga daahan SiC wuxuu gaari karaa nadiif ah in ka badan 99.98%, sidoo kale waxaan u habeyn karnaa alaabta silikoon carbide ee nadiifka iyo qiimaha kala duwan sida waafaqsan xaaladaha codsigaaga. Haddii aad u baahan tahay wax soo saar nadiif ah oo sarreeya, sida xiriir toos ah oo lala yeesho alaabada waferka semiconductor, waxaan ku siin karnaa daahan CVD SiC, daahan CVD TaC iyo geeddi-socod kale oo dusha sare ah ee walxaha substrate si aad ula kulanto shuruudahaaga farsamo ee adag ee kala duwan.