Waa maxay Silicon Carbide (SiC) Epitaxy?

aan la taaban karin,

Sida walxaha asaasiga ah ee jiilka soo socda ee korontada, Silicon carbide (SiC) waxay wadaa horumar la taaban karo oo ku saabsan waxtarka tamarta iyo waxqabadka nidaamka. Silsiladda wax soo saarka aaladda SiC, silikoon carbide epitaxy waa tallaabo go'aaminaysa aasaaska waxqabadka aaladda. Maqaalkani wuxuu si qoto dheer u sahamin doonaa qeexida SiC epitaxy, qalabka muhiimka ah ee habka epitaxy, codsiyadiisa gaarka ah ee farsamaynta semiconductor, iyo dhibaatooyinka iyo caqabadaha ay la kulmaan.

Qeexida SiC Epitaxy

Silicon carbide epitaxy waa farsamo korriin crystal ah oo ku lug leh koritaanka hal ama in ka badan lakab oo hal crystal silikon carbide film (ie, epilayer) oo leh jihada crystallographic gaar ah (badanaa la mid ah kan substrate) on substrate silicon carbide hal-crystal ah (SiC Substrate) kaas oo la gooyay oo la dhalaaliyay, iyada oo la adeegsanayo uumiga Kiimikada EpicD tayo sare leh, iwm. fiirsashada iyo dhumucda si sax ah loo xakameeyay. Habka koraya hal ama in ka badan lakabyo silikoon carbide ah (epilayer) on substrate SiC by kaydinta uumiga kiimikada (CVD) ama habab kale, oo leh jihada crystal gaar ah (caadi ahaan la mid ah sida substrate), aad u tayo sare leh oo si sax ah loo xakameeyo diiradda doping iyo dhumucdiisuna.

Ujeedooyinka ugu muhiimsan waa:

● Si loo bixiyo lakab shaqaynaya oo cilado hoose leh: epilayer-ku wuxuu leeyahay cufnaanta hoose ee cilladaha crystal marka loo eego walxaha substrate-ka.

● Xakamaynta saxda ah ee guryaha korantada: Awooda si sax ah loo xakameeyo nooca doping-ka (N- ama P-nooca), feejignaanta doping (inta u dhaxaysa 1014 ilaa 1019 cm-3), iyo dhumucda (laga bilaabo dhawr mikromitir ilaa boqollaal mikromitir) ee epilayer.

● Qaab dhismeedka Aaladda Dhisidda: Bixi goobta aasaaska u ah samaynta gobollada firfircoon (tusaale, lakabka qulqulaya, gobolka kanaalka, gobolka jidhka, iwm.) ee aaladda galinta ion ee xigta, sawir-qaadista, etching, metallization, iyo hababka kale.

Qalabka SiC Epitaxy iyo Codsiyada

Qalabka asaasiga ah ee waxqabadka SiC Hababka epitaxy waa reactors heerkulka sare ee kaydinta uumiga kiimikada (HTCVD). Kuwani waa habab aad u adag oo loogu talagalay in si sax ah loo xakameeyo korriinka crystal-ka ee xaaladaha daran (heerkulka sare, jawiga gaarka ah).

Noocyada iyo Astaamaha Qalabka:

Saddex nooc oo foornada koritaanka epitaxial silikoon carbide iyo kala duwanaanta agabka aasaasiga ah

1) Tignoolajiyada Guud: Kulul darbiga CVD waxaa si weyn looga isticmaalaa warshadaha maanta. Naqshadani waxay ka dhigaysaa qaybinta heerkulka qolka falcelinta mid labis ah, kaas oo ku habboon hagaajinta dhumucda lakabka epitaxial iyo lebbiska doping.

2) Habka kuleylinta: Kuleyliyaha kicinta ama kuleyliyaha iska caabinta waxaa badanaa loo isticmaalaa si loo gaaro heerkulka aadka u sarreeya ee looga baahan yahay SiC epitaxy (caadi> 1500 ° C, xitaa ilaa 1600-1700 ° C).

3) Habaynta qolka falcelinta:

● Reactors Horizontal: Gaasku waxa uu si siman u soo maraa wafer la saaray saldhig garaafeed (Susceptor). Qaab-dhismeed fudud marka la eego, laakiin kontoroolka isku midka ah ee cabbirka weyn waa caqabad.

● Planetary/Vertical Rotating Reactors: Wafers waxaa lagu dhejiyaa lugaha wareega, badiyaa leh dhowr satalayt oo isku mar ku wareegaya meel xarun ah. Naqshadeyntani waxay si weyn u wanaajisaa isku-duubnaanta heerkulka iyo qulqulka hawo-mareennada waaweyn iyada oo loo marayo wareeg iyo kacaan oo hadda waa xulashada ugu badan ee qalabka wax-soo-saarka mugga sare, gaar ahaan 150mm iyo 200mm wafers. Soosaarayaasha qalabka sida LPE, Aixtron, iwm. ayaa bixiya qalabkan.

LPE Halfmoon SiC EPI Reactor

4) Nidaamyada Gaadiidka Gaaska:

Waxaa loo baahan yahay in si sax ah loo xakameeyo qulqulka gaasaska kala duwan, oo ay ku jiraan:

● Horudhac: Ilaha Silikoonka (tusaale, silane SiH4), ilaha kaarboonka (tusaale, propane C3H8 ama ethylene C2H4), iyo ilaha kaarboonka (tusaale, ethylene C2H4). H4).

● Gaaska-qaadayaasha: sida caadiga ah hydrogen daahirsanaanta sare (H2), mararka qaarkood lagu qaso argon (Ar).

Dopants: Nitrogen (N2) ee nooca N-doping; trimethylaluminum (TMA) ama ethylborane (B2H6) ee nooca P-doping.

● Gaasaska Etching: tusaale hydrogen chloride (HCl) ee loogu talagalay nadiifinta qolka ama etching goobta dhexdeeda.

5) Automation iyo Control:

Qalabku wuxuu u baahan yahay in lagu qalabeeyo nidaam kontarool oo horumarsan si uu ula socdo loona xakameeyo cabbirrada sida heerkulka, cadaadiska, socodka gaaska, xawaaraha saldhigga, iwm si loo hubiyo xasilloonida habka iyo soo celinta.

Codsiyada ku jira habaynta Semiconductor:

1) Wax-soo-saarka SiC Epi-wafers: Wax-soo-saarka degdegga ah ee CVD-ga waa SiC wafers oo leh lakabyo epitaxial oo tayo sare leh. Tani waa meesha laga bilaabo dhammaan soo saarista aaladaha SiC ee xiga.

2) Farsamaynta Aaladaha Korontada: Epi-wafer-yadan waxaa loo diraa qalabka wax-soo-saarka chip (Fab) si loo soo saaro:

● SiC MOSFETs: Qalabku waxay u baahan yihiin inay si sax ah u koraan qaabab isku dhafan sida N-drifts, P-bodies/cells, iwm, iyo tayada lakabka epitaxial waxay saameyn toos ah ku leedahay Rds (on), Voltage Threshold (Vth), Breakdown Voltage (Vth), iyo RDS (on) qalabka. ), danab burbursan (Vbr) iyo isku halaynta.

● SiC SBD-yada: Qalabka waxaa inta badan loo isticmaalaa in lagu kobciyo lakabka N-drift, kaas oo go'aamiya awoodda xannibista iyo hoos u dhaca korantada ee diode.

3) Taageerida hawlaha R&D: Qalabka Epitaxy waxa kale oo loo isticmaalaa in lagu horumariyo hababka cusub ee epitaxial, sahaminta alaabada cusub iyo horumarinta qaab-dhismeedka aaladaha cusub.

Liiska qaybaha Aixtron Planetary Reactor

Dhibaatooyinka iyo Caqabadaha Qalabka SiC Epitaxy iyo Nidaamyada Codsiyada

Kakanaanta sare ee qalabka SiC epitaxy iyo xaaladaha aadka u daran ee geeddi-socodka ayaa ka dhigaya inay la kulmaan tiro caqabado halis ah codsiyada la taaban karo:

Caqabadaha heerka qalabka

● Labiska heerkulka iyo xakamaynta: Heerkulka>1500°C, aad bay u dhib badan tahay in lagu gaadho xakamaynta heerkulka saxda ah dhawr darajo Celsius gudahooda oo la raacayo raad weyn (sida 150mm ama 200mm wafers). Weecasha yaryar ee heerkulka waxay u horseedi kartaa dhumucda lakabka epitaxial oo aan sinnayn iyo xoojinta doping.

● Naqshadeynta socodka gaaska iyo hagaajinta: Habka socodka gaaska ee qolka falcelinta ayaa muhiim u ah heerka kobaca iyo isku midka. Naqshadeynta qalabku waxay u baahan tahay jilid kakan oo hydrodynamic iyo tijaabooyin si loo wanaajiyo madaxa qubeyska, joomatari qolka, iyo cabbirrada hawo-mareenka si looga fogaado fallaadhaha, aagagga dhintay, iyo nukleation-gaaska-wajiga (jiilka walxaha).

● Xasiloonida iyo Dayactirka Qalabka: Heerkulka sare iyo gaaska daxalka ah (tusaale, HCl) waxay sababaan daal iyo dillaac daran qolalka gudaha (sida, graphite, quartz). Qalab heerkul sare leh iyo qalab u adkaysta daxalka oo leh dayactir joogto ah iyo beddelka qayb ayaa loo baahan yahay si loo hubiyo xasilloonida daaqadda iyo wasakheynta walxaha hoose. Tani waxay kordhisaa kharashaadka hawlgalka iyo wakhtiga dhimista.

● Xakamaynta walxaha: Qaybaha yaryar ee ka soo baxa aaladda ayaa ah mid ka mid ah sababaha ugu waaweyn ee cilladaha dusha sare ee lakabka epitaxial iyo cilladda aaladda. Ilaha hawo nadiif ah oo aad u nadiif ah, filtarrada saxda ah, iyo hababka nadiifinta qolka la hagaajiyay ayaa loo baahan yahay.

● Qiimaha qalabka iyo awooda: Qalabka epitaxy ee SiC waa qaali. Isla mar ahaantaana, heerarka kobaca ayaa inta badan xaddidan si loo hubiyo tayada sare, gaar ahaan lakabyada epitaxial qaro weyn, iyo awoodda (Wafers Per Hour (WPH)) ee hal unug waa mid xadidan, taas oo si toos ah u saameynaysa kharashka SiC epitaxial wafers. Reactors Planetary waxay leeyihiin awood sare, laakiin waa ka adag yihiin oo kharash badan.

U gudubka waferrada 200mm: Kordhinta nidaamka 150mm ee qaan-gaadhka ah iyo naqshadaynta qalabka ilaa 200mm wafers waxay soo bandhigaysaa caqabado la taaban karo, gaar ahaan ilaalinta ama xitaa hagaajinta labbiska iyo xakamaynta cilladaha.

Caqabadaha Heerka Geedi socodka (si dhow ula xiriira qalabka)

● Xakamaynta cilladda: Sida si wax ku ool ah loo xakameeyo ama loo baabi'iyo kala-baxyada (TSD, TED) ee ka soo baxa substrate-ka, iyo sidoo kale cilladaha dusha sare (dalool, xoqid, isku-darka tillaabooyinka) iyo cilladaha gudaha (khaladaadka isugeynta) ee soo baxa inta lagu jiro epitaxy waa caqabad joogto ah. Hagaajinta cabbirrada qalabka (heerkulka, cadaadiska, saamiga C/Si, heerka kobaca) waa muhiim.

● Epitaxy film qaro weyn: Aaladaha korantada sare waxay u baahan yihiin lakabyo epitaxial doped hooseeya tobanaan ama xitaa boqolaal microns. Ilaalinta cufnaanta cilladaha hooseeya, lebbiska sare, iyo heerarka kobaca xasilloon ee waqtiyada korriinka dheer ee noocaas ah waa adag tahay.

● Xakamaynta doping: Helitaanka isku-ururinta doping aad u joogto ah (gaar ahaan doping hoose ee kala duwan ee 1014-1015cm-3) ee cabbirrada waferka waaweyn iyo dufcaddii ilaa dufcaddii, iyo sidoo kale is-dhexgalyo qotodheer, waxay u baahan tahay qalab leh xasillooni aad u sarreeya iyo xakamaynta socodka gaaska saxda ah. waxtarka firfircoonida hooseeya iyo saameynta xusuusta ee nooca P-doping (Al) sidoo kale waa caqabado. saamaynta xusuusta sidoo kale waa caqabado.