I. Waa maxay Susceptor Epitaxial LED?

Susceptor-ka epitaxial waa side xudunta loo isticmaalo hababka epitaxy-ga ee semiconductor. Qalabka uumiga kiimikada ee birta-organic (MOCVD) ama molecular beam epitaxy (MBE) qalabka lagama maarmaanka u ah kobaca epitaxial ee chips LED, shaqada suscepter waa in la taageero oo kululeeyo wafer (sida caadiga ah sapphire, SiC, ama Silicon) sida substrate, keenaya heerkul aad u adag oo loo baahan yahay si loo gaaro socodka gaaska gaaska gaar ah si loo gaaro heerka sare ee socodka gaaska ee epitaxial. dhigaalka filimka khafiifka ah.

Si fudud loo dhigo, waxay la mid tahay "kuleylka sare iyo masraxa taageerada" ee foornada MOCVD, halkaasoo lakabka iftiiminaya LED uu ku kordho.

II. Doorka Gaarka ah iyo Codsiga ee Hababka Epitaxial

Dareenku wuxuu door muhiim ah ka ciyaaraa habka kobaca epitaxial, oo si toos ah u saameeya waxqabadka, lebbiska, iyo kharashka chip-ka LED-ga ugu dambeeya.

1. Doorka: Wafer Carrier iyo Kululaynta Xuddunta

● Taageerada Substrate-ka: Waxay si sax ah u nashqadeysay jeexdin ama diyaarado loogu talagalay in si degan loo dhigo maraqa substrate-ka badan (tusaale, 2-inch, 4-inch, 6-inch).

● Kuleylka Heerkulka Sare: saxaaradku waxay ku kululaysaa maraqa ilaa heerkulkeeda korriinka (sida caadiga ah ka sarreeya 1000 ° C ee LEDs-ku-saleysan GaN) iyadoo la adeegsanayo habab ay ka mid yihiin kuleyliyaha soo noqnoqda raadiyaha (RF) ama kuleylinta iska caabinta. Saxaradu waa dhexdhexaadka tooska ah ee kulaylka loogu wareejinayo maraqa.

2. Codsiyada: Xaqiijinta tayada iyo isku-dhafka lakabka epitaxial

● Heerkulka Midaysan: Dhumucda iyo isku-dhafka isku midka ah ee lakabka epitaxial ayaa aad ugu nugul heerkulka koritaanka epitaxial. Naqshadeynta saxaaraddu waa inay hubisaa heerkulka dusha sare oo isku mid ah; Haddii kale, waxay u horseedi doontaa isbeddelka hirarka dhererka iyo dhalaalka aan joogtada ahayn ee meelo kala duwan oo ku yaal waferka.

● Ka-hortagga Daxalka Kiimikada: Inta lagu jiro MOCVD, saxaaradku waxa ay la kulmaan gaasas aadka u firfircoon (sida NH3, TMGa, TMIn, iwm.) iyo jawi heerkul sare leh. Waa inay lahaataa iska caabbinta daxalka oo aad u fiican si ay uga hortagto isbeddelka wasakhda inay wasakhayso lakabka epitaxial.

Awoodda Kulaylka iyo Deganaanshaha kulaylka: Saxaarada waxay u baahan tahay awood kulayl ku filan si ay u ilaaliso heerkulka saxda ah ee loo baahan yahay geeddi-socodka iyo in si degdeg ah looga jawaabo isbeddellada heerkulka, hubinta habka soo noqnoqda iyo xasilloonida.

III. Qalabka ugu muhiimsan ee Suscepters LED

Waqtigan xaadirka ah, suceptors epitaxial LED waxaa inta badan loo qaybiyaa laba qaybood:

1. Susceptors graphite:

Astaamaha: Nadaafadda sare, fududahay in la farsameeyo, qiime jaban.

Codsiyada: Inta badan waxaa loo istcimaalaa GaN-ku salaysan buluug/cad epitaxy LED (MOCVD).

Caqabada: Si looga hortago garaafyada in uu la falgalo gaasaska falceliska ah ee heerkulka sare iyo sii daynta wasakhda kaarboonka ee wasakhaysa lakabka epitaxial, dusha sare ee graphite suceptor waa in lagu dahaadhay lakabka SiC iyada oo la adeegsanayo kaydinta uumiga kiimikada (CVD) ama hababka immersion.

2. Waxyeelada birta:

Astaamaha: Sida tantalum (Ta) ama molybdenum (Mo) aloysyada, oo leh nadiif sare iyo kaar kuleyl oo wanaagsan.

Codsiyada: Inta badan waxaa loo isticmaalaa fosfide (sida GaP) casaan iyo jaalle LED epitaxy.

IV. Caqabado waaweyn

Waqtigan xaadirka ah, caqabadaha ugu muhiimsan ee wajahaya palette epitaxial waxay ku urursan yihiin saddex qaybood: isku mid ah, nolosha adeegga, iyo cabbirka sii kordhaya.

Caqabadaha	Arrimaha Gaarka ah	Saamaynta Farsamada
1.Heerkulka Midaysan	Xakamaynta faraqa heerkulka u dhexeeya cidhifka iyo xarunta saxamada cabbirka weyn (tusaale, dhexroorka ka sarreeya 800mm) way adag tahay.	Tani waxay keenaysaa mawjadaha dhererka liidata, dhumucda, iyo isku midka ahaanshaha halabuurka ee u dhexeeya iyo gudaha wafers (WIW & WTW), taasoo keentay hoos u dhaca wax soo saarka badeecada.
2.Waqti nololeed & faddarayn	Dildilaaca, diirinta, ama daxalka dusha sare ee SiC ee diilinta kulaylka sare waxay daaha ka qaadaysaa garaafka hoose.	Tani waxay soo gaabinaysaa nolosha saxanka, una baahan beddelaad joogta ah iyo kordhinta kharashka dayactirka; Soo-gaadhista graphite waxay si ba'an u wasakhaysaa lakabka epitaxial.
3. Baaxinta iyo kordhinta cabbirka (Qiimaynta)	Iyada oo cabbirada waferka ay ka kordhayaan min 2 inji ilaa 6 inji iyo xitaa 8 inji, iyo tirada waferrada la raro hal mar ayaa kordhaysa.	culeyska kulaylka ee saxaarada ayaa kor u kaca, dariiqa haynta kulaylku wuxuu noqonayaa mid aad u adag, iyo dhibka naqshadeynta iyo wax soo saarka ayaa si aad ah u kordheysa.
4. Dhaqdhaqaaqa socodka Gaaska	Godadka iyo dhismayaasha ku yaal saxaarada waxay saameeyaan gaaska socodka gaaska gudaha godka MOCVD.	Goobta qulqulka ee aan deganayn ama aan sinnayn waxay si toos ah u horseedaa gaadiidka aan sinnayn ee falcelinta, taas oo saameynaysa tayada lakabka epitaxial.

V. Xallinta Farsamada

Si wax looga qabto caqabadaha kor ku xusan, horumarka tignoolajiyada ee warshadaha ayaa ugu horreyn diiradda saaraya dhinacyada soo socda:

1. Hagaajinta Qaab dhismeedka saxaarad iyo Xakamaynta Goobta kulaylka

Kululaynta Qaybsan iyo Xakamaynta Heerkulka Firfircoon: Ka faa'iidaysiga aagagga kulaylka ee sida madaxbannaan loo maamulo (sida arrays heerkulbeeg ah) si loo sameeyo wakhtiga dhabta ah, hagaajinta awoodda firfircoon ee xarunta saxaarada iyo geesaha si loo dhimo luminta kulaylka loona gaaro magdhow heerkul sare oo sax ah.

Naqshadeynta Qaab-dhismeedka Gudaha ee Qalabka Saxarada: Shaqaalaysiinta awllaha malabka, mesh, ama naqshado dhismeed oo lakabyo badan leh si loo dheellitiro awoodda kulaylka iyo kulaylka, hubinta kulaylka degdega ah ee isku midka ah ee hoos ilaa korka.

2. Casriyeynta Tignoolajiyada Dahaarka ee SiC (Xalka Muhiimka ah)

Dahaarrada Waxqabadka ee Darajooyinka: Shaqaalaysiinta dahaarka qaab-dhismeedka lakabyo badan ama gradient, sida ku darista lakabka kaydinta ee u dhexeeya graphite iyo lakabka SiC ee ugu weyn, si loo waafajiyo farqiga u dhexeeya isku xidhka fidinta kulaylka (CTE) ee u dhexeeya graphite iyo SiC, taas oo si weyn u yaraynaysa cadaadiska kulaylka iyo dib u dhigista dildilaaca.

Cufnaanta Sare, Awood-hooseeya CVD SiC: Iyada oo la wanaajinayo habka kaydinta CVD, filimada SiC ee leh porosity aadka u hooseeya iyo nadiifnimada aadka u sarreeya ayaa la diyaariyey, iyaga oo hagaajinaya iska caabbinta daxalka iyo cufnaanta, iyo fidinta nolosha saxanka.

3. Sahminta Shayga Hal-abuurka leh

Saxarada Walaxda Cusub: Sahaminta walxaha isku dhafan ee leh kulaylka sare ee cufnaanta, cufnaanta hoose, iyo isku xidhka balaadhinta kulaylka ee u dhaw ta substrates GaN (sida kaarboonka karbide CFC/SiC ee la xoojiyay) si loo sii wanaajiyo waxqabadka iyo cimriga.

Dhaakhaatiirta dhoobada ah: Qaar ka mid ah codsiyada epitaxial ee gaarka ah, saxaarada waxaa lagu soo saaraa iyadoo la isticmaalayo dhoobada monolithic ee nadiifka ah (sida AlN ama SiC ceramics), oo gebi ahaanba meesha ka saaraysa khatarta wasakheynta garaafka. Si kastaba ha ahaatee, habkani waa mid aad qaali u ah oo ay adag tahay in la mariyo.

Semixlab SiC Coated Graphite Susceptor waa qayb si sax ah loo farsameeyay oo loogu talagalay nidaamka sare ee LED epitaxy iyo MOCVD. Lagu dhisay cufnaan sare graphite isostatic substrate oo lagu ilaaliyo nadiif-sare CVD silicon carbide (SiC) daahan, dabaylahani waxa uu bixiyaa meel kuleyl ah oo xasiloon oo kulaylinta waferka lebiska ah iyo nadaafadda qolka muddada-dheer ee hoos timaada xaaladaha habayn ee aad u daran oo ka badan 1100°C. Dhibane kastaa waxa uu maraa makiinad sax ah iyo kontorool isku mid ah oo daahan si loo gaadho qallafsanaanta dusha aadka u jilicsan ee ka hooseeya Ra 0.2 μm, taas oo yaraynaysa ku dhegga walxaha iyo qaska gaaska gudaha reactor MOCVD. Naqshadani waxay wanaajisaa isku-duubnida lakabka epitaxial, waxay kordhisaa cimriga qaybta waxayna yaraynaysaa inta jeer ee dayactirka. Waxaan rajaynaynaa su'aalahaaga dheeriga ah.