Silicon Carbide Cantilever Paddle

Silicon Carbide Cantilever Paddle waa wax qabad sare oo warshadeed oo ku salaysan tignoolajiyada Reaction Bonded SiC (RBSiC). Loogu talagalay xaaladaha qallafsan sida farsamaynta wafer semiconductor, daahan unugga sawir-voltaic ah iyo kaydinta uumiga kiimikada heerkulka sare (CVD). Its qaab-dhismeedka cantilever hal-cudud gaar ah, oo ay weheliyaan sifooyinka iska caabin xad-dhaaf ah ee silikon carbide, weli waxay sii wadi kartaa saxnaanta heerka millimitirka qallafsanaanta deegaanka heerkulka sare ee joogtada ah ee 1350 ℃, noqday xal kacaan ah in lagu beddelo quartz dhaqanka, Alloys biraha iyo qalabka kale.

Horumarka walxaha: Dib-u-dhiska injineernimada ee carbide silicon

1. Micro mucjiso habka sintering falcelinta

Qiyaastii 10-15% wajiga silikoon ee bilaashka ah ayaa lagu sameeyay xadka hadhuudhka ee suufka cantilever iyada oo loo marayo habka falcelinta falcelinta ee silikoon dhalaalaysa gudaha sic preform, samaynta qaab-dhismeed saddex-cabbir ah oo is-dhexgal ah. Qaab-dhismeedkan yar wuxuu siinayaa cufnaanta 3.02 g/cm³, porosity ka yar 0.1%, iyo xoog foorarsi ah ilaa 250 MPa (20 ℃) ​​iyadoo la ilaalinayo miisaanka khafiifka ah (40% wax ka yar birta aan birta lahayn), iyadoo la ilaalinayo moodeelka laastikada ee 300 GPa xitaa 1200

2. Isku-dheelitirka ugu dambeeya ee cabbirada thermodynamic

Isku-dhafka fidinta kulaylka (CTE) ee kaneecada ayaa si sax ah loo xakameynayaa 4.5 × 10-6K-1, kaas oo si aad ah ugu habboon walxaha daahan ee LPCVD (cadaadiska kiimikooyinka uumiga kiimikada hoose) si loo yareeyo cadaadiska interface ee ay keento is-waafajinta kulaylka. Heerkulka kulaylka wuxuu gaaraa 45 W / (m·K) at 1200 ℃, kaas oo si dhakhso ah u qooyn kara kulaylka kana fogaanaya kulaylka maxalliga ah, iyo naqshadeynta shatiga leh ee kala-baxa kuleylka kuleylka, kala duwanaanshaha heerkulka ee saxaarad wafer ayaa ka yar 2 ℃ / m²

Faa'iidada farsamada: Ka boodista shaybaarka ilaa wax soo saarka ballaaran

1. Naqshad la qabsi oo toos ah

Aagga rarka ee suufka cantilever wuxuu qaataa qaab dhismeedka daaqada modular ah (saxnimada daloolka ± 0.05mm), kaas oo taageera nidaamka isku xirka 12- dhidibka ah ee ku qalabaysan maraqa 150-300mm oo la jaan qaadaya cududda robotka. Cidhifyada go'an waxaa la siiyay dhumucdiisuna tahay gidaarka gradient (δ₁ = 8.6mm ilaa δ₁ 4.8mm) si loo hubiyo adkeynta qaabdhismeedka oo loo yareeyo culeyska guud ee 22% ee ₃ si loo buuxiyo shuruudaha xasilloonida firfircoon ee gudbinta xawaaraha sare.

2. Kacaankii xakamaynta wasakhda

Jiilka gudaha ee 2-5μm SiO₂ lakabka passivation ee dusha sare, daabka cantilever ee jawiga daxalka leh oo ay ku jiraan Cl₂, HF, roobab ion birta waa in ka yar 0.1 ppb, taas oo ah amarrada 3 ee ka hooseeya walxaha alumina. Ka dib 1000 heerkul sare oo imtixaan wareeg ah, tirada qaybaha dusha sare ee dhacaya had iyo jeer waxay ka yar yihiin 5 / m2, buuxinta shuruudaha nadaafadda heerka 10 ee wax soo saarka semiconductor.

Faahfaahin Gaar ah:

1. Magacyo kale: Heerkulka sare ee wareejinta wafer; RBSiC baabuur cantilever; Madal cantiver ah oo dahaaran; SiC Monolithic Cantilever.

2. Codsiga: 

Wax-soo-saarka Semiconductor: Waferrada gaadiidka ee foornooyinka fidinta, foornooyinka soo-jiidashada, foornooyinka oksaydhka iyo qalabyada kale.

Daahan sawir qaade: Taageerida TOPCon/HJT unugga PECVD gaadiidka waferka,

3. Halbeegyada xudunta ah: Awoodda foorarsiga waa 380 MPa (heerkulka qolka) → 280 MPa (1400 ℃), isugeynta fidinta kulaylku waa 4.2 × 10⁻⁶ / ℃, iyo heerka daxalka ee 40% HF wuxuu ka yar yahay 0.008 mm / sanadkii. jawiga aan shaqaynayn 1600℃ isticmaalka joogtada ah, deegaanka oksaydhka 1400℃, taageero 1400℃↔25℃ wareegga shoogga kulaylka 500 jeer.

Semiconductor wafer wax soo saarka

Shelefyada foornada fidsan ee foornada: Habka doping fosfooraska/boron, waferka 300mm silikoon wafer waxaa la hoos geeyay 1250 ℃/8 saacadood oo daawaynta kulaylka ah, doorsoomiyaha qaabkuna waa ka yar yahay 0.1mm/m.

Saxanka koritaanka Epitaxial: Dhigista MOCVD ee lakabyada epitaxial SiC, taageerta meelaynta nanoscale ee maraqyada ka hooseeya 10-6 Torr vacuum.

Wax soo saarka unugyada sawir-qaadista

Baabuurka daahan PERC: lagu sakhiray 800 ℃ Plasma bombardment ee qalabka PECVD, nolosha adeegga in ka badan 5000 jeer, 8 jeer ka sarreeya qalabka graphite.

TOPCon Laser sintering: Iyada oo nidaamka laser ah oo leh ballac garaaca garaaca wadnaha ee 10ns, saxnaanta isku dhafka xulashada ee lakabka silikon polycrystalline ee dambe ayaa lagu gaaraa ± 3μm.

1. Horumarka hoos u dhaca hantida maaddada

Mashiinka silikoon carbide cantilever propeller wuxuu qaataa tignoolajiyada falcelinta silikoon carbide (RBSiC), wuxuuna dhex galaa matrix silikoon carbide matrix silikoon dhalaalaysa si loo gaadho qaab-dhismeed cufan leh <0.5%. Xoog qaloocsanaantiisu waa sida ugu sareysa 380 MPa (heerkulka qolka), walina waxa ay ilaalisaa awoodda 280 MPa heerkulkiisu yahay 1400℃ sare.

2. Xasilooni ka jirta deegaan aad u daran

Iska caabin heerkul sare ah: heerkul shaqo oo joogto ah ilaa 1600 ℃ (jawi aan fiicneyn), iska caabin waqti gaaban ah 1800 ℃ heerkul sare oo degdeg ah (sida habka laysarka laysarka), ma jirto khatar jilicsan ama qallafsan.

Iska caabbinta daxalka: Heerka daxalka ee asiidhyada xooggan sida HF, HCl, iyo H₂SO₄ <0.01 mm/sanad. Muddada nolosha ee qolalka falcelinta CVD ee ay ku jiraan Cl₂/O₂ ayaa kordhay 5-8 jeer marka la barbar dhigo agabka garaafka.

Iska caabbinta shoogga kulaylka: Taageerada 1400 ℃ ↔ 25 ℃ wareegga isbeddelka heerkulka degdega ah (ΔT=1375 ℃), majiro dillaac ama daciifin xoog ah kadib wareegyada 500.