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Doonta Wafer ee SiC oo nadiif ah oo sareysa
Sida hormoodka ah soo saaraha Shiinaha iyo alaab-qeybiyaha SiC Wafer Boat-sare, Semixlab's Silicon Carbide wafer wafer waxaa si weyn loogu isticmaalaa isku xirka geeddi-socodka muhiimka ah sida LPCVD, oxidation iyo annealing sababtoo ah xasilloonida kuleylka aadka u fiican, iska caabbinta daxalka iyo xoogga farsamada. Haddii aad raadinayso SiC Wafer Boat kaas oo yarayn kara wasakhowga walxaha, kordhinta nolosha adeegga oo hubisa badbaadada waferka, alaabtani waxay noqon doontaa doorashadaada ugu fiican.
Description
Dhinaca wax soo saarka semiconductor, hababka heerkulka sare ayaa caqabado ba'an ku ah sidayaal wafer. Marka heerkulku dhaafo 1600℃, qaadaha quartz-dhaqameedka (waferka loo isticmaalo doonta quartz) wuxuu bilaabaa inuu jilciyo oo beddelo oo sii daayo wasakhaha, taasoo keenaysa in heerka qashinka waferku uu sare u kaco.
SiC Wafer Boat-sare oo nadiif ah, oo leh faa'iidooyinka walxaha dabiiciga ah ee silicon carbide (SiC), ayaa si buuxda u xalliya barta xanuunka warshadaha waxayna noqotaa aalad muhiim u ah wax soo saarka semiconductor sare, gaar ahaan wax soo saarka aaladda awooda SiC.
sooc
Astaamaha jireed ee asaasiga ah iyo cabbirrada farsamada ee alaabta:
| Tilmaamayaasha Waxqabadka | Doonta Wafer ee SiC oo nadiif ah oo sareysa | Qaadaha quartz-dhaqameedka | Faa'iidooyinka la hagaajiyay |
| Heerkulka heerkulka ugu sarreeya | 1800°C (sii socota) / 2000°C (ugu sarreeya) | 1200 ° C | Iska caabbinta heerkulka ayaa horumaray 50% |
| Qabsashada kuleylka | 4.9 W/cm · K (heerkulka qolka) | 1.5 W/cm·K | Waxtarka kulaylka ayaa kordhay 226% |
| Coefficient kordhinta heerkulka | 4-5 × 10⁻⁶/K | 0.55 × 10⁻⁶/K | Xasiloonida kulaylka ayaa soo hagaagtay 7 jeer |
| darantahay ingeega, | Mohs 9.2 (labaad kaliya ilaa dheeman) | Mohs 7 | Xiro iska caabin ah ayaa horumarisay 30 jeer |
| Cadaadiska barta xiriirka wafer | <5 MPa (naqshad ka-hortagga silbashada) | >20 MPa | Heerarka silbashada wafer ayaa hoos loo dhigay 80% |
| Sii daynta qayb | 0 qaybood/cm² (Fasalka 100 nadaafadda) | >50 qaybood/cm² | Wasakhowga ku dhow eber |
Waxqabadka aadka u wanagsan ee silikoon carbide wafer carrier (SiC Wafer Carrier) waxa uu ka yimaadaa astaamihii sayniska ee gaarka ahaa. Hoos waxaa ah isbarbardhigga faahfaahsan ee cabbirrada jirka ee muhiimka ah:
Halbeegyadani waxay si toos ah u tarjumaan wax-soo-saarka hagaagay iyo kharashyada la dhimay ee wax-soo-saarka semiconductor, sida lagu muujiyey kuwa soo socda:
Faa'iidada waxqabadka kulaylka: SiC's bandgap ballaaran (3.26 eV) waxay hubisaa inay ilaaliso qaabdhismeedka crystal xasiloon 2000°C kana fogaato qallafsanaanta kulaylka. Heerarka kulaylka sare (4.9 W/cm · K) waxay u ogolaataa maraqa in si siman loo kululeeyo oo ay meesha ka saarto cilladaha xabagta ee ay keento diiqada kulaylka.
Awoodda makaanikada: 9.2 adkaanta Mohs waxay ka hortagtaa saameynta jireed inta lagu jiro habka, iyo nolosha adeeggu waxay ka badan tahay 10 jeer sidayaal dhaqameedyada quartz. Naqshadeynta booska semi-wareega ah ee gaarka ah ayaa xakameysa cadaadiska xiriirka wafer ee ka hooseeya 5MPa, asal ahaan baabi'inta ifafaalaha silbashada heerkulka sare.
Dhaqdhaqaaq la'aanta kiimikada: U dulqaadashada gaasaska aadka u wasakhaysan sida HF iyo HCl ayaa ka badan 10,000 saacadood, iyo eber wasakhowga ah waxaa lagu hayaa LPCVD, faafinta, oksaydhka iyo hababka kale.
Codsiyada
Doorka muhiimka ah ee Sareeye Sare ee SiC Wafer Boat
Doontayada SiC Wafer ee nadiifka ah ee Sare waxaa si weyn loogu isticmaalaa hababka wax soo saarka semiconductor ee muhiimka ah:
Annealing Heerkulka Sare: Khadka wax soo saarka ee saaraha sic wafer-ka, heerkulka-sare ee annealing waa tallaabo muhiim ah si loo dhaqaajiyo dopants iyo hagaajinta cilladaha shalash. Xasiloonida heerkulka sare ee doonta waferka ee SiC waxay hubisaa isku-duubnida iyo waxtarka habka nuugista.
Kobaca Epitaxial: Haddii ay tahay epitaxy-ku-saleysan silikoon ama silikoon carbide wafer epitaxy, iska caabbinta heerkulka sare iyo iska caabbinta daxalka ee doonta wafer ee SiC ayaa ka dhigaysa qaade ku habboon si loo hubiyo kobaca lakabka epitaxial oo tayo sare leh.
qaybinta: Foornada faafinta heerkulka sare, doonta wafer ee SiC ee ku taal doonta wafer LPCVD waxay u adkeysan kartaa daawaynta heerkulka sare ee muddada dheer si loo hubiyo faafinta isku midka ah ee atamka doping oo ay sameeyaan sifooyin koronto oo sax ah.
Dhigista Filimka khafiifka ah: Gaar ahaan codsiyada doonyaha wafer ee Lpcvd, daadinta walxaha aadka u hooseeya iyo kulaylka wanaagsan ee doomaha wafer ee SiC waxay gacan ka geystaan sidii loo heli lahaa filimaan tayo sare leh oo isku mid ah.
Qalab ku habboon iyo habraac ku habboon:
✔ La jaan qaada foornooyinka caadiga ah ee LPCVD (sida TEL, Kokusai, ASM, SVG, Tystar, iwm.)
✔ Tilmaamaha wafer-ka la beddeli karo sida 100mm/150mm/200mm
✔ Waxay taageertaa rakibidda qalabka habka jiifka iyo toosan
Doonta wafer ee Semixlab ee SiC waa doorasho ku habboon si loo horumariyo hufnaanta nidaamkaaga iyo wax-soo-saarkaaga, waana hoggaamiye horumarsan xalalka doon wafer ee Semiconductor.
Adeegyada aan bixino
Dukaanka wax soo saarka Semixlab
Dukaamada alaabta Semixlab
