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SiC dahaarka dahaadhka ah ee garaafyada dabada ah ee Si epitaxy
Disk-ga dahaarka leh ee SiC-da ee ka socda Semixlab Semiconductor waxaa loogu talagalay reactors-ka sare ee Si epitaxy, halkaasoo isku-duubnida heerkulka iyo nadaafadda geeddi-socodka ay muhiim u yihiin. Waxaa laga dhisay garaafyo istatic ah oo nadiif ah oo nadiif ah oo ay ilaalinayso daahan CVD SiC cufan, saxanku wuxuu xaqiijiyaa hawlgal heerkul sarreeya oo deggan, faafin gaas isku mid ah, iyo iska caabin gaar ah oo u ah hydrogen iyo daxalka chlorine.
Description
Semixlab's SiC-da dahaarka garaafyada garaafiga ah ee dahaarka leh waa qayb si sax ah loo farsameeyay oo loogu talagalay nidaamyada silikoon epitaxy sare leh (Si epitaxial growth) Maaddada salku waa garaafyada daloola ee istaatigga ah, oo leh kuleyl kuleyl sare, cufnaan hoose, iyo qaab dhismeed furan oo la hagaajiyay. Dusha sare waxaa lagu dahaadhay lakab silikoon carbide (SiC) nadiif ah oo cufan, saafi ah, oo lagu shubo kayd kiimikaad (CVD). Dahaarkani wuxuu bixiyaa iska caabin aan caadi ahayn oo loogu talagalay daxalka, abuurista walxaha, iyo nabaadguurka kiimikaad ee meelaha hydrogen iyo chlorinated.
sooc
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 · kg-1K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Dhallinta Modul | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Codsiyada
Shaqada iyo Doorka Si Epitaxy Process
Si- epitaxial CVD-ga casriga ah, xakamaynta saxda ah ee lebiska heerkulka iyo qaybinta qulqulka gaaska ayaa muhiim u ah in la gaaro lakabyo epitaxial oo tayo sare leh oo aan cillad lahayn. Saxanka garaafiga ah ee dahaarka leh ee dahaarka leh ayaa si istiraatiji ah loo meeleeyaa hoosta wafer susceptor ama qayb ka mid ah isu imaatinka gaaska fidiyaha si uu u qabto hawlaha soo socda:
1. Sinnaanta socodka gaaska
Qaab dhismeedka daloolku waxa uu u shaqeeyaa sidii gaas qaybiye ah, isaga oo hubinaya qulqulka laminarka isku midka ah ee gaasaska habka (tusaale, SiHCl₃, H₂, HCl) oogada waferka. Tani waxay gacan ka geysataa baabi'inta qulqulka qulqulka waxayna ilaalisaa heerarka dhigaalka joogtada ah ee dhexrooryada waferka (6-8 inji).
2. Labbiska Goobta Kulaylka
Iyada oo kuleylkeedu sarreeyo iyo naqshad dalool oo ku habboon, saxanku wuxuu u qaybiyaa kulaylka si siman, isagoo yareynaya heerkulbeegyada shucaaca. Milicsiga dahaarka infrared ee daahan SiC waxa ay xoojisaa ka faa'iidaysiga tamarta oo ay dejiso heerkulka wafer gudaha ±1°C.
3. Daxalka iyo Xakamaynta Qaybaha
Lakabka SiC wuxuu u shaqeeyaa sidii xannibaad ilaalin ah, isagoo ka hortagaya oxidation graphite, etching hydrogen, iyo soo saarista kaarboonka. Tani waxay hubinaysaa xaaladaha nadiifka ah ee aadka u nadiifka ah, yaraynta cilladaha ay sababto qayb ka mid ah lakabka epitaxial.
4. Isku halaynta muddada dheer
Isku darka garaafyada daloolka leh iyo daahan SiC waxay bixisaa 3-5 × cimri dheer marka loo eego qaybaha garaafyada aan la daboolin, yaraynta wakhtiga hoos u dhaca iyo inta jeer ee dayactirka.
Semixlab waxa uu ku takhasusay qaybaha garaafka dahaarka leh ee SiC ee horumarsan ee koritaanka epitaxial, habaynta kulaylka, iyo hababka korriinka crystal. Tignoolajiyada dahaarka gudaha-gurigu waxay xaqiijisaa cufan, lebis, iyo lakabyo nadiif ah oo SiC ah kuwaas oo kordhiya qaybta nolosha oo ilaalinaysa nadaafad gaar ah iyada oo la raacayo shuruudaha nidaamka dalabka. Naqshado la habeeyey ayaa la heli karaa iyadoo lagu saleynayo qaabaynta reactor-kaaga, shuruudaha cabbirka daloolka, iyo goobta kulaylka. Waxaan rajaynaynaa su'aalahaaga dheeraad ah.
Adeegyada aan bixino
Dukaanka wax soo saarka Semixlab
