All Categories
Dahaarka CVD Silicon Carbide (SiC)

Dahaarka CVD Silicon Carbide (SiC)

Bogga Hore > Alaabta > Dahaadhka CVD > Dahaadhka CVD Silicon Carbide (SiC)

Daboolka Satellite Graphite ee SiC ee loogu talagalay MOCVD
SiC dahaarka leh saxan Satellite Graphite ee MOCVD
Daboolka Satellite Graphite ee SiC ee loogu talagalay MOCVD
SiC dahaarka leh saxan Satellite Graphite ee MOCVD

Daboolka Satellite Graphite ee SiC ee loogu talagalay MOCVD


Daboolka dayax-gacmeedka garaafiga ah ee dahaarka leh ee SiC ee Semixlab waxaa loogu talagalay MOCVD hababka epitaxy, bixinta xasilloonida kulaylka oo aad u wanaagsan, iska caabin kiimikaad, iyo ilaalinta wafer-walax-la'aan ah. Iyada oo leh substrate graphite oo lagu dahaadhay CVD SiC oo nadiif ah, waxay hubisaa qaybinta heerkulka isku midka ah, hoos u dhigidda wasakheynta, iyo nolosha adeegga fidsan ee hoos timaada xaaladaha MOCVD ee gardarada ah. Xalkani wuxuu ka caawiyaa soo-saareyaasha semiconductor-ka inay gaaraan wax-soo-saar sare iyo kharashyo hawleed oo hooseeya. Ku soo dhawoow su'aalahaaga dheeraadka ah.

Description

Daboolka dayax-gacmeedka ee dahaarka leh ee SiC waa qayb muhiim ah oo ku jira nidaamyada MOCVD (Metal-Organic Chemical Vapor Deposition), gaar ahaan loogu talagalay in lagu hubiyo xasilloonida, adkeysiga, iyo nadaafadda inta lagu jiro koritaanka epitaxial ee GaN, SiC, GaAs, iyo agabyada kale ee semiconductor. Waxaa lagu dhisay saldhigga garaafiga isostatic oo lagu dahaadhay CVD SiC oo nadiif ah, waxay isku daraysaa guryaha kulaylka wanaagsan leh iska caabbinta kiimikaad sare, oo buuxinaysa shuruudaha adag ee wax soo saarka semiconductor-ka soo socda.

Qalabka & Astaamaha Jirka

Substrate graphite: Garaafyada isostatic ee hadhuudh-ku-fiican, oo siinaya xoog farsamo oo sarreeya iyo mashiinnada.

Daboolka CVD SiC: Lakabka carbide silikoon ee CVD, hubinta engegnaanta gaarka ah, iska caabinta daxalka, iyo ka hortagga curinta walxaha. Iyo sifada wareejinta kulaylka heersare ah ee heerkulbeegyada isku midka ah ee loo qaybiyo nidaamka susceptor MOCVD. Nolosha adeeg dheer ee baaskiil wadida heerkulka sare ee soo noqnoqda (>1200°C).

sooc
Tilmaamaha jireed ee garaafyada isostatic
Property Unit Qiimaha caadiga ah
Cufnaanta Bulk g/cm³ 1.83
darantahay ingeega, HSD 58
Iskudarida Korantada μΩ.m 10
Awoodda Firfircoon MPA 47
Xoojinta isdhexgalka MPA 103
Xoog siligga MPA 31
Dhallinta Modul GPA 11.8
Balaadhinta kulaylka (CTE) 10-6K-1 4.6
Habdhaqanka kulaylka W·m-1K-1 130
Celceliska Cabbirka Hadhuudhka umm 8-10
Xadgudubka % 10
Waxyaabaha Dambaska ah ppm ≤5 (ka dib markii la nadiifiyo)
Tilmaamaha asaasiga ah ee daahan CVD SiC
Property Qiimaha caadiga ah
Dhismaha Crystal FCC β wajiga polycrystalline, inta badan (111) ku jihaysan
mugga 3.21 g / cm³
darantahay ingeega, 2500 Vickers adag (500 garaam)
Cabbirka Midhaha 2 ~ 10μm
Nadiifinta kiimikada 99.99995%
Awoodda kuleylka 640 · kg-1K-1
Heerkulka Sublimation 2700 ℃
Awoodda Firfircoon 415 MPa RT 4-dhibic
Dhallinta Modul 430 Gpa 4pt laab, 1300 ℃
Habdhaqanka kulaylka 300W·m-1K-1
Balaadhinta kulaylka (CTE) 4.5 × 10-6K-1
Codsiyada

Codsiyada ku jira MOCVD

Daboolka dayax-gacmeedka garaafiga ah ee dahaarka leh ee SiC waa qayb muhiim ah oo ka mid ah reactors MOCVD, oo loogu talagalay in lagu hubiyo maaraynta wafer ee deggan, xakamaynta heerkulka saxda ah, iyo habaynta wasakhda la'aanta. Codsiyadeedu waxay ku fidsan yihiin wax soo saarka semiconductor oo kala duwan, oo ay ku jiraan GaN, GaAs, InP, SiC, iyo agabyada kale ee III-V.

1. Soo dejinta Wafer & Taageerada

Daboolka dayax-gacmeedku wuxuu u adeegaa sidii qaab-dhismeedka qaab dhismeedka wafers inta lagu jiro habka koritaanka epitaxial. Saldhigga garaafka wuxuu bixiyaa xasillooni farsamo oo heer sare ah, halka dahaarka SiC uu ka hortagayo nabaad-guurka wuxuuna hubinayaa meelaynta wafer-ka. Isku dhafkan wuxuu yareynayaa halista silbashada wafer ama dildilaaca yar ee hoos yimaada hawlgalka heerkulka sare.

2. Wareegga lebis ee Xataa Dhigista

MOCVD gudaheeda, waferrada waxa lagu wareejay xawaare la kontaroolay si loo gaadho qaybinta gaaska horudhaca ah ee isku midka ah. Daboolka dayax-gacmeedku wuxuu hubinayaa wareeggu siman oo xasilloon, yaraynta gariirka iyo ilaalinta dhumucda lakabka epitaxial lebbiska ee dusha sare ee wafer - arrin muhiim u ah LED-soo-saarka sare leh, qalabka korontada, iyo soosaarka qalabka RF.

3. Maamulka kulaylka & Wareejinta kulaylka

Labbiska heerkulka ayaa lagama maarmaan u ah tayada crystal. Heerarka kulaylka sare ee daahan SiC waxay xaqiijisaa wareejinta kulaylka wax ku oolka ah ee ka soo jiidashada ilaa waferka, hoos u dhigista kulaylka. Tani waxay keenaysaa sifooyinka lakabka joogtada ah sida feejignaanta doping, jihaynta crystal, iyo walbahaarka filimka.

4. Ka-hortagga Gaaska Geedi socodka ah

Nidaamyada MOCVD waxay ku lug leeyihiin gaasas dagaal leh sida NH₃ (ammonia), H₂ (hydrogen), iyo horudhacyada birta-organic. Lakabka SiC wuxuu u shaqeeyaa sidii caqabad adag oo ka soo horjeeda weerarka kiimikada, ka hortagga nabaad guurka garaafka, abuurista walxaha, iyo wasakheynta qolka kicinta.

5. Yaraynta Wasakhowga Walxaha

Wasakhaynta walxaha waxay si toos ah u saamaysaa waxqabadka iyo wax-soo-saarka aaladda. Dahaarka SiC wuxuu bixiyaa siman, cufan, iyo dusha adag oo iska caabiyay jajabinta iyo samaynta boodhka, hubinta filimada epitaxial ee nadiifka ah iyo kalsoonida qalabka sare.

6. Nolosha Adeega Dheeraadka ah ee Baaskiilka Heerkulka Sare

Inta lagu jiro wareegyada kululaynta iyo qaboojinta soo noqnoqda, garaafka aan dahaarka lahayn ayaa si dhakhso ah u hoos u dhacaya. Dahaarka SiC wuxuu si weyn u wanaajiyaa iska caabbinta oksaydhka iyo cimri dhererka farsamada, si ay u kordhiso muddada adeegga, yaraynta wakhtiga dhimista, iyo hoos u dhigista guud ahaan qiimaha lahaanshaha ee shaybaadhka iyo R&D.

Advantage tartanka

Faa'iidooyinka Semixlab

Semixlab waxaa ka go'an inuu keeno garaafyada waxqabadka sare leh iyo xalalka dahaarka leh ee SiC ee qalabka epitaxy-ga ee semiconductor. Awoodeena waxaa ka mid ah:

● Habaynta - Naqshado loo habeeyey oo ku habboon noocyada kala duwan ee reactor MOCVD iyo shuruudaha macaamiisha.

● La-talinta Farsamada - In ka badan 20 sano oo khibrad wax soo saar semiconductor ah si ay u taageeraan hagaajinta habka.

● Xakamaynta tayada adag - Dabool kasta oo dayax-gacmeedku wuxuu maraa hubinta saxnaanta cabbirka, xaqiijinta dhumucda dahaarka, iyo tijaabooyinka xasiloonida heerkulka sare.

● Adeegga Iibka Ka Dib Lagu kalsoonaan karo - Kooxda taageerada u heellan waxay hubisaa jawaab-celin degdeg ah iyo hagitaan joogto ah oo macaamiisha ah.

Daboolka dayax-gacmeedka garaafiga ee SiC dahaarka leh ee Semixlab waxaa loo habeeyay si uu u bixiyo degganaansho heerkul sare ah, iska caabin daxalka, iyo nadaafadda hababka MOCVD. Iyadoo la hubinayo tayada dusha sare ee wafer iyo kordhinta qalabka wakhtiga, waxay bixisaa kharash-ku-ool ah oo xal la isku halleyn karo oo loogu talagalay epitaxy-ka isku-dhafka ah. La xidhiidh Semixlab maanta si aad u habayso qaybahaaga garaafyada dahaarka leh ee SiC oo aad kor ugu qaaddo waxqabadkaaga wax soo saarka MOCVD.

Adeegyada aan bixino

Dukaanka wax soo saarka Semixlab

lama yaqaan

WEYDIISASHADA

Qaybaha kulul