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SiC dahaarka waferka
Faahfaahin Gaar ah:
Ujeedada: Si gaar ah loogu talagalay semiconductor CVD (1000 ° C - 1400 ° C) iyo PVD hababka kulaylka sare, waxay siisaa madal taageero oo xasiloon oo wafers.
Halbeegyada xudunta u ah: qallafsanaanta dusha sare Ra <0.5 μm; adkaanta sare (> 2500 HV); isugeynta ballaadhinta kulaylka (CTE) ayaa si sax ah u dhigma (≈ 2.6 x 10⁻⁶/K), gebi ahaanba meesha ka saaraysa wafer-wareerka ama silbashooyinka uu sababay cadaadiska kulaylka.
Description
Semixlab wuxuu bixiyaa wax-qabad sare oo wax-qabad leh. Alaabtan waxaa inta badan lagu dabaqaa semiconductor CVD PVD qalabka si ay u bixiso taageero maroodiyaasha iyo ka hortagga wax kasta oo waxyeelo iyo dhibciyo shil ay sababto socodka nitrogen.
Saldhig silikoon carbide oo dahaaran (SiC dahaarka Susceptor) ayaa si weyn loogu isticmaalaa semiconductors sababo la xiriira astaamo ay ka mid yihiin iska caabbinta heerkulka sare, iska caabinta daxalka, daahirsanaan sare iyo wasakh yar oo maroodiyaasha.
Codsiga:
Si gaar ah loogu talagalay semiconductor CVD (1000 ° C - 1400 ° C) iyo PVD hababka kulaylka sare, waxay siisaa madal taageero ah oo xasiloon oo loogu talagalay weelasha.
Astaamaha Muhiimka ah:
Deganaanshuhu heerkul sare oo heersare ah: Waxay u adkaysataa kulaylka ba'an ee ka sarreeya 1400 ° C, hubinta meelaynta wafer-ka saxda ah iyada oo aan wax leexleexan.
Ilaalinta xooggan: Si wax ku ool ah uga hortag saameynta qulqulka nitrogen>10 m/s iyo dhibco shil ah, siinta ilaalinta ugu sarreysa ee waferka.
adkeysi heer sare ah: Daahan SiC wuxuu bixiyaa adkeysi sare (> 2500 HV) iyo iska caabin daxalka, kordhinta nolosha adeegga.
Oogada sare ee nadiifka ah: qallafsanaanta dusha sare Ra <0.5 μm, yaraynta khatarta wasakhowga walxaha.
Saldhig Silikoon (Silikon Susceptor)
Codsiga: Ku habboon geeddi-socod heerkul sare ah oo silikoon ah oo leh shuruudo aad u sarreeya oo ku habboon kulaylka (sida koritaanka epitaxial, <1200 ° C).
Astaamaha Muhiimka ah:
● Isku dheelitirka kulaylka saxda ah: Iyada oo la socota walxaha waferka (Silicon monocrystalline), iskudarka balaadhinta kulaylka (CTE) ayaa si sax ah u dhigma (≈ 2.6 x 10⁻⁶/K), gebi ahaanba meesha ka saaraysa wafer-wareerka ama silbashooyinka ay keento diiqada kulaylka.
● Degdega gaarsiinta: Wareegga gaarsiinta badeecadaha caadiga ah si weyn ayaa loo soo gaabiyay, iyadoo ugu hooseysa 4-6 toddobaad (marka la barbar dhigo 8-12 toddobaad ee saldhigyada SiC).
● Nadaafad sare: Buuxisay jaangooyooyinka agabka silikon ee heerka-semiconductor.
● Tayada dusha sare: Si sax ah oo dhalaalaya, qallafsanaanta dusha sare Ra <0.2 μm.
sooc
| Tilmaamaha asaasiga ah ee daahan CVD SiC | |
| Property | Qiimaha caadiga ah |
| Dhismaha Crystal | FCC β wajiga polycrystalline, inta badan (111) ku jihaysan |
| mugga | 3.21 g / cm³ |
| darantahay ingeega, | 2500 Vickers adag (500 garaam) |
| Cabbirka Midhaha | 2 ~ 10μm |
| Nadiifinta kiimikada | 99.99995% |
| Awoodda kuleylka | 640 · kg-1·K-1 |
| Heerkulka Sublimation | 2700 ℃ |
| Awoodda Firfircoon | 415 MPa RT 4-dhibic |
| Da'yarka Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| Habdhaqanka kulaylka | 300W·m-1·K-1 |
| Balaadhinta kulaylka (CTE) | 4.5 × 10-6K-1 |
Codsiyada
SiC epitaxial lakabka korriinka garaafka susceptor.
Wecinta gaaska gelitaanka iyo xakamaynta goobta kulaylka ee foornada koritaanka epitaxial ee SiC.
Dukaanka wax soo saarka Semixlab
