Nadiifinta sare ee garaafka adag ayaa dareemay

Nadiifinta sare ee garaafka adag ayaa la dareemay, agabka kulaylka xudunta u ah semiconductor jiilka saddexaad iyo wax soo saarka sare ee sawir-qaadista, waa badeecad istaraatiijiyadeed oo ay soo saartay Semixlab oo ku saleysan in ka badan 20 sano oo cilmi baaris ku saleysan kaarboon iyo khibrad horumarineed. Iyada oo la adeegsanayo tignoolajiyada xoojinta horumarka iyo habka garaafaynta heer-kulka aadka u sarreeya, maaddadu waxay ku guulaysataa qallafsanaanta qaab-dhismeedka iyo xasilloonida deegaanka oo agabka jilicsan ee dhaqanka ahi aanu gaadhi karin iyadoo la ilaalinayo sifooyinka kulaylka ee ugu fiican ee garaafka. Habka wax-soo-saarka wuxuu ku bilaabmayaa alaabada cayriin ee caalamiga ah, ka dib 1200 ℃ kaarboonaynta ka hor si loo sameeyo qaab dhismeedka lakabka ah, is-horumariyay resin-ka hooseeya ee ash phenolic waa la dhex-maray, qaybaha qaabaysan ee adag waxaa lagu diyaariyaa 80MPa tignoolajiyada riixitaanka isostatic. Jawiga la ilaaliyo ee argon, jidhku waxa uu maraa 72 saacadood garaafka gradient at 2800 ℃, kaas oo kor u habaynta ee atamka carbon si ay u sameeyaan qaab-dhismeedka crystal aad loo amray, iyo ugu dambeyntii gaadho saxnaanta cabbirka ± 0.05mm iyada oo loo marayo shan-dhidibka CNC xarunta machining. Daahan SiC ah oo dhumucdiisu tahay 50-200μm ayaa lagu soo saari karaa kaydinta uumiga kiimikada (CVD) si loo hagaajiyo caabbinta oksaydhka.

Nadiifinta sare ee garaafka adag ee dareemaya waxay muujineysaa wax qabad heersare ah oo heersare ah oo heerkul sare leh: kaarboonka ka kooban yahay ≥99.99% qiimaha dambaska si adag ayaa loo xakameeyaa gudaha 65ppm, buuxinta shuruudaha nadaafadda heerka semiconductor; Xataa heerkulka sare ee 2000 ℃, waxa ay wali sii haysaa awoodda ≥3MPa, si guul leh uga gudubta dhibaatada warshadaha in qalabka dareema jilicsan ay fududahay in la beddelo oo burburo xaaladaha heerkulka sare. Waxay ku gaartaa saxnaanta saxda ah ee xakamaynta heerkulka foornada korriinka ee SiC, kaas oo 40% ka sarreeya celceliska warshadaha, oo si wax ku ool ah u yareeya cufnaanta hal-ka-baxa crystal ee ka hooseeya 500cm⁻². Ka dib 100 wareegyada deminta iyo kuleylka laga bilaabo 2000 ℃ ilaa heerkulka qolka, heerka hoos u dhaca khadka maaddooyinka ayaa had iyo jeer ka yar 0.5%, taas oo muujinaysa in xasilloonida cabbirka ee kaarboon dhaqameed dareemay in ka badan 3 jeer.

In berrinkii jiilka saddexaad ee wax soo saarka semiconductor, sheygu wuxuu noqday qaybta aasaasiga ah ee wareejinta uumiga jirka (PVT) SiC crystal foornada koritaanka, qaab-dhismeedka ay xoojisay u adkeysan kara heerkulka sare ee maxaliga ah ee 3000 ℃ oo aan gurguurta qaab-dhismeedka, oo leh SIC-Si gaar ah daahan isku dhafan, heerkulka iska caabinta oksidation ayaa kor loo qaadi karaa ilaa 1800 ℃. Heerka faakuumka foornada kareemka ah ee kelida ah ayaa deggan 5×10^-3Pa muddo dheer.

Xogta Farsamada_Kaarboon/Kaarboon Kaarboon:

1. Foornada Koritaanka Hal crystal SiC (habka PVT)

Sida lakabka dahaarka kulaylka asaasiga ah ee dhammaan qaybaha graphite crucible, saxnaanta xakamaynta heerkulka axial waa ± 0.3 ℃ / mm; Faakuumka qolka kobaca ayaa la ilaaliyay <5×10-3Pa; Cufnaanta kala-baxa hal crystal ayaa lagu dhimay <500/cm².

2. Foornada ingot polycrystalline Photovoltaic

Qeybta ugu sareysa ee kuleylka kuleylka waxay yareysaa isticmaalka tamarta 35% (marka la barbardhigo xalalka kaarboonka ee dhaqameed).

3. Qalabka epitaxy jiilka saddexaad

Lagu dhex daray qolka falcelinta MOCVD si loo gaaro ± 1℃ isku mid ahaanshaha heerkulka waferka.

Taageer 8-inch GaN-on-SiC epitaxial sheet wax soo saarka tirada badan.

Xoog dabacsanaan heerkul sarreeya: ka sarreeya heerka warshadaha, ilaa 150MPa.

Wareegyada kulaylka: ilaa 1000 jeer, aad uga sarreeya celceliska warshadaha.

Taageerada adeegyada si buuxda loo habeeyey: laga bilaabo alaab ilaa qaab, heer sare ah oo la beddeli karo.