Saxanka Taageerada Lugaha ee TaC ee Dahaarka leh
Saxanka Taageerada Pedestal-ka ee Semixlab TaC ee Dahaaran waa qayb qaab-dhismeed oo waxqabad sare leh oo loogu talagalay fal-galayaasha epitaxy-ga semiconductor-ka iyo nidaamyada dhigista heerkulka sare. Qaybta waxaa lagu soo saaray iyadoo la adeegsanayo substrate graphite saafi ah oo sarreeya oo lagu daray dahaarka CVD tantalum carbide (TaC) ee cufan kaas oo ka ilaaliya substrate-ka graphite gaasaska geedi socodka ee daran iyo heerkulka aadka u daran. Saxanka Taageerada Pedestal-ka ee Dahaaran ee Semixlab TaC waxaa si weyn loogu isticmaalaa fal-galayaasha epitaxy-ga SiC, nidaamyada GaN MOCVD, iyo qalabka CVD ee semiconductor-ka ee horumarsan. Waxaan rajeyneynaa inaad na weydiiso wakhti kasta.
Description
Taarikada Taageerada Lugaha ee Dahaaran ee TaC waxay u adeegtaa qayb muhiim ah oo qaab-dhismeed ah oo ku jirta fal-galayaasha epitaxial-ka semiconductor-ka heerkulka sare leh. Waxaa loogu talagalay inay bixiso taageero farsamo oo deggan oo loogu talagalay isku-dhafka substrate-ka iyo saldhigga iyadoo la ilaalinayo xasilloonida kiimikada iyo kulaylka ee gaarka ah xaaladaha geedi socodka ee aadka u daran.
Qaybtani waxay isticmaashaa substrate graphite saafi ah oo sarreeya oo ay weheliso dahaarka cufan ee CVD tantalum carbide (TaC). Qaab-dhismeedkan isku-dhafan wuxuu ka faa'iidaystaa mashiinada sare ee graphite iyo gudbinta kulaylka oo ay weheliso iska caabbinta heerkulka sare ee TaC iyo xasilloonida kiimikada ee gaarka ah.
Taarikada taageerada substrate-ka ee Semixlab TaC-da ku dahaaran ayaa si weyn loogu isticmaalaa qalabka wax soo saarka semiconductor-ka ee horumarsan, oo ay ku jiraan nidaamyada epitaxial-ka SiC, falgalayaasha GaN MOCVD, iyo falgalayaasha CVD heerkulka sare leh. Nidaamyadan gudahood, xasilloonida qaab-dhismeedka, iska caabbinta daxalka, iyo xakamaynta wasakhowga ayaa muhiim u ah ilaalinta wax soo saarka wafer-ka ee joogtada ah.
Doorka ku jira Fal-celiyeyaasha Epitaxial-ka ee Semiconductor-ka
Qalabka epitaxial-ka semiconductor-ka dhexdiisa, qalabka taageerada ayaa sita substrate-ka iyo wafer-ka inta lagu jiro hababka koritaanka heerkulka sare. Saxanka taageerada wuxuu u adeegaa qayb muhiim ah oo qaab-dhismeed ah oo ku jirta shirkan.
Shaqadeeda ugu weyni waa inay bixiso taageero farsamo oo deggan oo loogu talagalay qaab-dhismeedka substrate-ka, iyadoo hubinaysa meelaynta saxda ah ee qaybaha muhiimka ah ee fal-galayaasha inta lagu jiro hawlgalka.
Maadaama hababka epitaxial-ka ay caadi ahaan ku shaqeeyaan heerkul ka badan 1000°C ilaa 1600°C, xitaa qaab-dhismeedka yar ama qaab-dhismeed la'aanta ayaa si xun u saameyn kara:
● Isku mid ahaanshaha heerkulka fal-galka
● Qaybinta socodka gaaska
● Joogtaynta koritaanka lakabka epitaxial
Iyada oo la ilaalinayo xasilloonida farsamada ee qaab-dhismeedka substrate-ka, TaC Coated Pedestal Support Plate waxay ka caawisaa ilaalinta xasilloonida kulaylka iyo joomatari inta lagu jiro jawiga falcelinta - muhiim u ah gaaritaanka korriin isku mid ah oo epitaxial ah oo ku baahsan wafer-ka.
sooc
| Tilmaamaha jireed ee daahan TaC | |
| mugga | 14.3 (g/cm³) |
| Dheecaan gaar ah | 0.3 |
| Isku xidhka balaadhinta kulaylka | 6.3*10-6/K |
| Adag (HK) | 2000 HK |
| Resistance | 1 × 10-5 Ahm*cm |
| Deganaanshaha kuleylka | <2500 ℃ |
| Cabbirka garaafiga ayaa isbeddela | -10 ~ -20um |
| Dhumucda dahaarka | ≥20um qiimaha caadiga ah (35um± 10um) |
Codsiyada
Codsiyada caadiga ah
Taarikada taageerada saldhigga ee dahaarka leh ee Semixlab TaC ayaa si weyn loogu isticmaalaa qalabka wax soo saarka semiconductor-ka ee horumarsan, oo ay ku jiraan:
● Falaadhaha epitaxial-ka ee SiC ee wax soo saarka semiconductor-ka korontada
● Nidaamyada GaN iyo LED MOCVD
● CVD-ga heerkulka sare leh iyo fal-galayaasha koritaanka epitaxial-ka
● Nidaamyada kaydinta semiconductor-ka ee horumarsan
Advantage tartanka
Faa'iidooyinka Codsiyada Epitaxy Heerkulka Sare
Xasillooni Heerkul Sare oo Heer Sare ah oo Heerkul Sare leh: TaC waxay leedahay dhibic dhalaalid aad u sareysa (qiyaastii 3880°C), taasoo ka dhigaysa mid ku habboon xaaladaha kulul ee adag ee ku jira falgalayaasha epitaxial. Dahaarka wuxuu ilaaliyaa hufnaanta qaab-dhismeedka iyo xasilloonida dusha sare inta lagu jiro hawlgalka heerkulka sare ee dheer.
Iska caabinta Daxalka Sare: Geedi socodka koritaanka epitaxial badanaa waxay ku lug leeyihiin gaasaska falgalka ah sida hydrogen, ammonia, iyo isku-dhafka ka kooban chlorine. Dahaarka TaC wuxuu muujiyaa iska caabin aad u weyn oo ku wajahan deegaannada kiimikada, taasoo ka hortagaysa burburka substrate-ka garaafitka.
Wasakhowga Walxaha oo La Yareeyay: Soo saarista walxaha waa arrin muhiim ah oo ku saabsan wax soo saarka semiconductor-ka. Dahaarka TaC ee cufan, oo isku mid ah ayaa yareeya nabaad-guurka dusha sare iyo soo-baxa, isagoo gacan ka geysanaya ilaalinta jawi fal-gale aad u nadiif ah iyo ilaalinta tayada wafer-ka.
Muddada Cimriga Qaybaha La Kordhiyey: Iyada oo ka ilaalinaysa substrate-ka graphite daxalka heerkulka sare iyo xirashada farsamada, dahaarka TaC wuxuu si weyn u dheereeyaa cimriga adeegga ee taarikada taageerada substrate-ka. Tani waxay yareysaa soo noqnoqoshada dayactirka ee xarumaha wax soo saarka semiconductor-ka waxayna kor u qaadaysaa waqtiga guud ee qalabka.
Adeegyada aan bixino

Dukaanka wax soo saarka Semixlab


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