Trisection TaC dahaarka garaafyada giraanta ee sic crystal koritaanka

The Trisection TaC Coated Graphite Ring waa qayb si sax ah loo farsameeyay oo loogu talagalay kobaca kiristaalka SiC ee heerkulka sare ee PVT (Gaadiidka uumiga Jirka) iyo hababka hoos u dhigista. Naqshaday oo ay soo saartay Semixlab, giraantani waxay isku daraysaa kulaylka wanaagsan ee garaafka istatic-ga saafiga ah ee sare leh oo leh kiimiko sare iyo caabbinta kulaylka ee daahan CVD Tantalum Carbide (TaC). Naqshaddeeda saddex-geesoodka ah waxay bixisaa xasilloonida qaabdhismeedka iyo maareynta cadaadiska inta lagu jiro hawlgalka heerkulka sare, hubinta kobaca kareemka isku midka ah iyo qaybta la kordhiyay ee nolosha wax soo saarka SiC.

Qalabaynta Maaddada iyo Agabka Jirka

The Trisection TaC Dahaarka Graphite Ring waxaa laga sameeyay garaafka istatic graphite ee nadiifka sare ah, si taxadar leh loo farsameeyay oo lagu dahaadhay cufan, lebbiska CVD TaC. Isku darka alaabtan waxay keenaysaa qayb u adkaysata kulaylka aadka u daran, kiimikooyinka, iyo baahida farsamada ee foornooyinka koritaanka crystal SiC.

Features Muhiimka ah:

Qalabka Saldhigga: Garaafyada Istatic oo leh cufnaan sare iyo qaab-dhismeed hadhuudh fiican.

Alaabta Dahaarka: Kiimiko ahaan uumi-deposited (CVD) Tantalum Carbide. Iyo barta dhalaalka: TaC ilaa ~ 3880°C - oo ka mid ah kuwa ugu sarreeya dhammaan agabka la yaqaan.

Codsiyada ku jira Habka Kobaca SiC Crystal

Habka kobaca kristanta ee SiC, giraanta garaafka dahaarka leh ee trisection TaC ayaa door muhiim ah ka ciyaara ilaalinta summaynta kulaylka, sharafta qaabdhismeedka, iyo nidaamka nadaafadda gudaha qolka kobaca. Nashqaddeeda iyo dahaarkeeda ayaa loo habeeyay si ay u taageerto samaynta crystals deggan oo ay yarayso faddaraynta - fure u ah helitaanka kiristaalo SiC oo tayo sare leh.

1. Midnimada kulaylka iyo dhimista cadaadiska

Qaab-dhismeedka saddex-geesoodka ahi waxa uu yareeyaa culayska farsamo ee gudaha ee ay sababto heer-kulka xad-dhaafka ah (ilaa 2400°C). Naqshadani waxay hubisaa in xitaa kulaylka loo qaybiyo hareeraha abuurka crystal wuxuuna ka hortagayaa qallafsanaanta ama dildilaaca, kor u qaadida korriinka kareemka isku midka ah inta lagu jiro wax-soo-saarka.

2. Ilaalinta Daxalka iyo Nabaadguurka

Inta lagu jiro koritaanka sublimation, uumiga Si iyo SiO waxay si adag uga falceliyaan gudaha graphite crucible. Dahaarka TaC wuxuu u shaqeeyaa sidii xannibaad fidineed oo ilaalin ah, isagoo ka hortagaya substrate-ka garaafka inuu ka falceliyo noocyada gaaska. Tani waxay keenaysaa jawi korriin nadiif ah, nolol adeeg oo dheer, iyo hoos u dhigista wasakhda ku darista crystal.

3. Nadiifnimada Crystal oo la xoojiyay

Dahaarka CVD TaC wuxuu bixiyaa firfircoonitaan kiimiko oo heer sare ah, isaga oo meesha ka saaraya khatarta wasakhowga kaarboonka iyo ilaalinta jawiga isdhexgalka ee u dhexeeya walxaha isha iyo kristanta SiC ee sii kordheysa. Tani waxay si toos ah u wanaajisaa tayada kristanta iyo sifooyinka korantada, oo muhiim u ah soo saarista substrate-ka korantada wax-qabadka sare leh.

4. Waafaqsanaanta qaab-dhismeedka

Naqshadeynta saddex-geesoodka ayaa u oggolaanaysa isu-ururinta qaab-dhismeedka, fududaynta dayactirka fudud iyo ku-habboonka saxda ah ee qaababka kala duwan ee foornada PVT. Kooxda injineernimada ee Semixlab waxay habayn karaan joomatari si ay ugu dhigmaan isku imaatinka qolofka gaar ah iyo kuwa abuurka haysta, iyaga oo hubinaya is dhexgal aan kala go 'lahayn iyo waxqabad la isku halayn karo.

Faa'iidooyinka Muhiimka ah ee Semixlab

Iyada oo in ka badan labaatan sano oo waayo-aragnimo ah oo ku saabsan epitaxy semiconductor, qalabka koritaanka crystal, iyo teknoolajiyada daahan horumarsan ee CVD, Semixlab waa lamaanahaaga aad ku kalsoon tahay qaybaha dib-u-nadiifinta sare ee loo isticmaalo wax soo saarka SiC.

●Adeegga Habaynta: Cabirrada giraanta lagu habeeyay, dhumucda dahaarka, iyo qaabaynta qaybta ee moodooyinka foornada gaarka ah.

● Xaqiijinta Qalabka: Kormeerka gudaha ee cufnaanta daahan, lebbiska dhumucda, iyo xoogga ku dheggan.

●La-talinta Farsamada: Hagidda khabiirka ee injineerada khibrad qoto dheer u leh SiC epitaxy iyo hababka PVT.

● Xaqiijinta tayada: 100% raadinta, kormeerka dusha sare, iyo dulqaadka heerkulka sare.