CVD SiC halbeegga waferka

Xaaladaha codsiga ama qalabka: Qalabka epitaxial AMTA

Nadiifin aadka u sarreeya (≤100ppb, ICP-E10 shahaado) iyo kuleyl/deganaansho kiimiko oo gaar ah oo loogu talagalay korriinka u adkaysta wasakhda ee GaN, SiC, iyo lakabyada silikoon-ku-saleysan. Lagu farsameeyay tignoolajiyada saxda ah ee CVD, waxay taageertaa 6"/8"/12" wafers, waxay hubisaa kulaylka ugu yar, waxayna u adkaysataa heerkul aad u daran ilaa 1600°C.

Awooda Shirkadda

Semixlab Technology Co., Ltd waxay leedahay 2 R&D xarumaha, 2 saldhigyada wax soo saarka, 12 khadadka wax soo saarka, 150+ shaqaalaha, iyo R&D xisaabaadka in ka badan 30%. Qaabaynta alaabtayada waxaa inta badan loo isticmaalaa LED, wareegga isku dhafan ee IC, jiilka saddexaad ee semiconductor, photovoltaic iyo warshadaha kale. Semixlab waxay leedahay R&D xooggan, wax soo saar iyo tijaabin isku dhafan iyo awoodo xaqiijin. Isla mar ahaantaana, waxaan si joogto ah u hagaajineynaa tignoolajiyadayada iyo qalabkayaga maalgelinta tobanaan milyan sanadkii.

CVD SiC hal susceptor wafer waxaa inta badan lagu isticmaalaa qalabka silikoon epitaxy ee walaxda lagu dabaqay, maaddada waxaa la soo dejiyey graphite + CVD SiC daahan.

Halbeegyada qeexitaanka asaasiga ah: daahan silikoon carbide ah iyo walxaha garaafyada:

Codsiyada guud:

Sida qalab ka mid ah qalabka AMTA epitaxy, waxaan ku siin karnaa 6inch 8inch 12inch susceptor wafer.

CVD SiC halbeegga wafer ee qalabka AMTA epitaxy:

1. Taageerada wafer iyo isku-duubnaanta goobta kulaylka

Sida shaqada xudunta u ah CVD SiC susceptor hal wafer oo ku jira AMTA qalabka epitaxy ee MOCVD, CVD iyo qalabka kale ee epitaxy, susceptor wuxuu u shaqeeyaa sidii side wafer, wuxuuna si isku mid ah ugu wareejiyaa kulaylka dusha sare ee wafer iyadoo la adeegsanayo kulaylka iska caabinta ama kuleylka RF si loo hubiyo kobaca isku midka ah ee lakabyada epitaxial (tusaale GaN, SiC).

Naqshadeeda kulaylka sare ee naqshadeynta waxay yaraynaysaa heerkulka heerkulka u dhexeeya cidhifka iyo xarunta, xakamaynta isku mid ahaanshaha heerkulka gudaha ± 1 ° C iyo ka fogaanshaha cilladaha walwalka walxaha.

2. Caqabadaha Wasakhowga Kiimikada

Qaybaha graphite-ka si toos ah u soo gaadha gaaska hab-socodka ayaa u muuqda inay oxidize si ay u sameeyaan CO₂ ama budo, wasakheeyaan qolka falcelinta. Dahaarka CVD SiC wuxuu u shaqeeyaa sidii lakab ilaalin ah si uu graphite ka go'doomiyo gaaska daxalka loona yareeyo wasakhaynta qaybo ka mid ah dusha waferka.

Tusaale ahaan, habka GaN epitaxy, dahaarka ayaa si wax ku ool ah u diidi kara nabaad-guurka horudhacyada sida NH₃ iyo TMGa, oo dammaanad qaadaya nadiifnimada filimka.

3. La qabsiga hababka epitaxial ee kala duwan

Semiconductors-jiilka saddexaad: loogu talagalay SiC ama GaN epitaxy on substrates SiC, si loo buuxiyo shuruudaha aaladaha awoodda sare leh ee filimada qaro weyn iyo heerarka cilladaha hooseeya.

Wax-soo-saarka Micro-LED: si loo taageero meelaynta-saxsanaanta sare iyo maamulka kulaylka ee maraqa yar-yar (tusaale, 8 inji), iyo in la yareeyo fidinta qaybinta hirarka.

Sifooyinka walxaha: waxqabadka ugu wanaagsan ee CVD SiC

1. Nadiifin aad u sarreeya iyo qaab dhismeedka cufan

Daahan silikoon carbide (SiC), oo lagu shubo kayd kiimikaad uumiga (CVD), wuxuu gaadhay heerar wasakhaysan oo ah ≤100ppb (Heerka E10) sida ay xaqiijisay ICP-MS (Inductively Coupled Plasma Mass Spectrometry). Nadiifintan aadka u saraysa waxay yaraynaysaa halista faddaraynta inta lagu jiro kobaca epitaxial, iyada oo hubinaysa tayada kristanta sare ee codsiyada muhiimka ah sida gallium nitride (GaN) iyo silicon carbide (SiC) wax soo saarka semiconductor-bandgap ballaaran.

Qaab dhismeedka dahaarka waa cufan iyo lebis, oo leh qallafsanaan hoose oo dusha sare ah, taas oo yaraynaysa khatarta daadinta walxaha waxayna buuxisaa shuruudaha heerka sare ee qolalka nadiifka ah ee semiconductor.

2. Iska caabin deegaan oo aad u daran

Iska caabin heerkul sare ah: Waxay ilaalin kartaa xasilloonida physicochemical at 1600 ° C, taas oo aad uga sareysa heerka oksaydhka ee substrate graphite (qiyaastii 400 ° C), taas oo si weyn u dheeraynaysa nolosha adeeggeeda.

Iska-caabbinta Daxalka: Aad ayey ugu adkaysanaysaa gaaska daxalka ah sida Cl₂, H₂ iyo nabaadguurka balaasmaha, oo ku habboon MOCVD, MBE iyo deegaan habsocodka qallafsan.

3. Waxqabadka kulaylka oo aad u fiican

Dhaqdhaqaaqa kulaylka ilaa 300 W/mK waxay hubisaa in mareegaha loo kululeeyo si isku mid ah, waxay yaraynaysaa dhumucda lakabka epitaxial (tusaale, mashaakilaadka wareejinta hirarka), waxayna wanaajisaa wax-soo-saarka LED-yada, aaladaha korontada, iyo alaabada kale.

Isku-dhafka balaarinta kulaylka (4×10-⁶/K) wuxuu ku dhow yahay kan substrate graphite, kaas oo ka fogaanaya dildilaaca ama diirka dahaarka isbeddelka heerkulka awgeed.

4. Mechanical xoogga iyo adkeysiga

Awoodda dabacsanaanta ilaa 470 MPa, awood u leh inay u adkeyso heerkulka sare ee heerkulka sare ee heerkulka hooseeya iyo cadaadiska farsamada, yaraynta soo noqnoqda dayactirka.

Waqtigan xaadirka ah, nadiifinta daahanka carbide ee silikoonku wuxuu gaari karaa E10 imtixaanka ICP, kaas oo ku saabsan 100 ppb, heerka nadiifnimadani wuxuu ka mid yahay heerka ugu sarreeya Shiinaha.